Anders Gustafsson
Anders Gustafsson
Professor of Solid state physics
Email verificata su ftf.lth.se
Titolo
Citata da
Citata da
Anno
Epitaxial III− V nanowires on silicon
T Mårtensson, CPT Svensson, BA Wacaser, MW Larsson, W Seifert, ...
Nano letters 4 (10), 1987-1990, 2004
6392004
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
4712009
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
4712009
Self-assembled quantum dots in a nanowire system for quantum photonics
M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’regan, ...
Nature materials 12 (5), 439-444, 2013
3182013
Local probe techniques for luminescence studies of low-dimensional semiconductor structures
A Gustafsson, ME Pistol, L Montelius, L Samuelson
Journal of applied physics 84 (4), 1715-1775, 1998
1831998
Spatially resolved Hall effect measurement in a single semiconductor nanowire
K Storm, F Halvardsson, M Heurlin, D Lindgren, A Gustafsson, PM Wu, ...
Nature nanotechnology 7 (11), 718, 2012
1702012
Effect of lateral confinement on valence-band mixing and polarization anisotropy in quantum wires
F Vouilloz, DY Oberli, MA Dupertuis, A Gustafsson, F Reinhardt, E Kapon
Physical Review B 57 (19), 12378, 1998
1471998
Polarization anisotropy and valence band mixing in semiconductor quantum wires
F Vouilloz, DY Oberli, MA Dupertuis, A Gustafsson, F Reinhardt, E Kapon
Physical review letters 78 (8), 1580, 1997
1431997
Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures
G Biasiol, A Gustafsson, K Leifer, E Kapon
Physical Review B 65 (20), 205306, 2002
1392002
Low‐pressure organometallic chemical vapor deposition of quantum wires on V‐grooved substrates
A Gustafsson, F Reinhardt, G Biasiol, E Kapon
Applied physics letters 67 (25), 3673-3675, 1995
1311995
Epitaxial growth of indium arsenide nanowires on silicon using nucleation templates formed by self‐assembled organic coatings
T Mårtensson, JB Wagner, E Hilner, A Mikkelsen, C Thelander, J Stangl, ...
Advanced materials 19 (14), 1801-1806, 2007
1052007
Catalyst-free nanowires with axial InxGa1− xAs/GaAs heterostructures
M Heiß, A Gustafsson, S Conesa-Boj, F Peiró, JR Morante, G Abstreiter, ...
Nanotechnology 20 (7), 075603, 2009
622009
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
N Vainorius, D Jacobsson, S Lehmann, A Gustafsson, KA Dick, ...
Physical Review B 89 (16), 165423, 2014
612014
Structure and formation mechanisms of AlGaAs V‐groove vertical quantum wells grown by low pressure organometallic chemical vapor deposition
G Biasiol, F Reinhardt, A Gustafsson, E Martinet, E Kapon
Applied physics letters 69 (18), 2710-2712, 1996
421996
Self-ordering of quantum-wire superlattices on V-grooved substrates
G Biasiol, E Kapon, Y Ducommun, A Gustafsson
Physical Review B 57 (16), R9416, 1998
411998
Scanning tunneling microscope and electron beam induced luminescence in quantum wires
L Samuelson, A Gustafsson, J Lindahl, L Montelius, ME Pistol, JO Malm, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
411994
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays
D Ren, DL Dheeraj, C Jin, JS Nilsen, J Huh, JF Reinertsen, AM Munshi, ...
Nano letters 16 (2), 1201-1209, 2016
402016
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
A Berg, S Lehmann, N Vainorius, A Gustafsson, ME Pistol, LR Wallenberg, ...
Journal of crystal growth 386, 47-51, 2014
382014
Cathodoluminescence spectroscopy and imaging of individual GaN dots
A Petersson, A Gustafsson, L Samuelson, S Tanaka, Y Aoyagi
Applied physics letters 74 (23), 3513-3515, 1999
351999
Cathodoluminescence spectroscopy and imaging of individual GaN dots
A Petersson, A Gustafsson, L Samuelson, S Tanaka, Y Aoyagi
Applied physics letters 74 (23), 3513-3515, 1999
351999
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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