Anders Gustafsson
Anders Gustafsson
Professor of Solid state physics
Email verificata su ftf.lth.se
TitoloCitata daAnno
Epitaxial III− V nanowires on silicon
T Mårtensson, CPT Svensson, BA Wacaser, MW Larsson, W Seifert, ...
Nano Letters 4 (10), 1987-1990, 2004
6202004
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
4412009
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
4412009
Self-assembled quantum dots in a nanowire system for quantum photonics
M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’regan, ...
Nature materials 12 (5), 439, 2013
2922013
Local probe techniques for luminescence studies of low-dimensional semiconductor structures
A Gustafsson, ME Pistol, L Montelius, L Samuelson
Journal of Applied Physics 84 (4), 1715-1775, 1998
1801998
Spatially resolved Hall effect measurement in a single semiconductor nanowire
K Storm, F Halvardsson, M Heurlin, D Lindgren, A Gustafsson, PM Wu, ...
Nature nanotechnology 7 (11), 718, 2012
1612012
Effect of lateral confinement on valence-band mixing and polarization anisotropy in quantum wires
F Vouilloz, DY Oberli, MA Dupertuis, A Gustafsson, F Reinhardt, E Kapon
Physical Review B 57 (19), 12378, 1998
1481998
Polarization anisotropy and valence band mixing in semiconductor quantum wires
F Vouilloz, DY Oberli, MA Dupertuis, A Gustafsson, F Reinhardt, E Kapon
Physical review letters 78 (8), 1580, 1997
1461997
Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures
G Biasiol, A Gustafsson, K Leifer, E Kapon
Physical Review B 65 (20), 205306, 2002
1362002
Low‐pressure organometallic chemical vapor deposition of quantum wires on V‐grooved substrates
A Gustafsson, F Reinhardt, G Biasiol, E Kapon
Applied physics letters 67 (25), 3673-3675, 1995
1321995
Epitaxial growth of indium arsenide nanowires on silicon using nucleation templates formed by self‐assembled organic coatings
T Mårtensson, JB Wagner, E Hilner, A Mikkelsen, C Thelander, J Stangl, ...
Advanced Materials 19 (14), 1801-1806, 2007
1072007
Catalyst-free nanowires with axial InxGa1− xAs/GaAs heterostructures
M Heiß, A Gustafsson, S Conesa-Boj, F Peiró, JR Morante, G Abstreiter, ...
Nanotechnology 20 (7), 075603, 2009
612009
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
N Vainorius, D Jacobsson, S Lehmann, A Gustafsson, KA Dick, ...
Physical Review B 89 (16), 165423, 2014
532014
Self-ordering of quantum-wire superlattices on V-grooved substrates
G Biasiol, E Kapon, Y Ducommun, A Gustafsson
Physical Review B 57 (16), R9416, 1998
411998
Structure and formation mechanisms of AlGaAs V‐groove vertical quantum wells grown by low pressure organometallic chemical vapor deposition
G Biasiol, F Reinhardt, A Gustafsson, E Martinet, E Kapon
Applied physics letters 69 (18), 2710-2712, 1996
411996
Scanning tunneling microscope and electron beam induced luminescence in quantum wires
L Samuelson, A Gustafsson, J Lindahl, L Montelius, ME Pistol, JO Malm, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
401994
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays
D Ren, DL Dheeraj, C Jin, JS Nilsen, J Huh, JF Reinertsen, AM Munshi, ...
Nano letters 16 (2), 1201-1209, 2016
372016
Self-ordering and confinement in strained InGaAs/AlGaAs V-groove quantum wires grown by low-pressure organometallic chemical vapor deposition
E Martinet, F Reinhardt, A Gustafsson, G Biasiol, E Kapon
Applied physics letters 72 (6), 701-703, 1998
361998
Cathodoluminescence spectroscopy and imaging of individual GaN dots
A Petersson, A Gustafsson, L Samuelson, S Tanaka, Y Aoyagi
Applied physics letters 74 (23), 3513-3515, 1999
341999
Cathodoluminescence spectroscopy and imaging of individual GaN dots
A Petersson, A Gustafsson, L Samuelson, S Tanaka, Y Aoyagi
Applied physics letters 74 (23), 3513-3515, 1999
341999
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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