Sharnali Islam
Sharnali Islam
University of Dhaka
Verified email at - Homepage
Cited by
Cited by
Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition
A Behnam, AS Lyons, MH Bae, EK Chow, S Islam, CM Neumann, E Pop
Nano letters 12 (9), 4424-4430, 2012
Scaling of high-field transport and localized heating in graphene transistors
MH Bae, S Islam, VE Dorgan, E Pop
ACS nano 5 (10), 7936-7944, 2011
Role of Joule heating on current saturation and transient behavior of graphene transistors
S Islam, Z Li, VE Dorgan, MH Bae, E Pop
IEEE electron device letters 34 (2), 166-168, 2013
Electronic structure of InN/GaN quantum dots: multimillion-atom tight-binding simulations
S Ahmed, S Islam, S Mohammed
IEEE Transactions on Electron Devices 57 (1), 164-173, 2009
Hysteresis-free nanosecond pulsed electrical characterization of top-gated graphene transistors
EA Carrion, AY Serov, S Islam, A Behnam, A Malik, F Xiong, M Bianchi, ...
IEEE Transactions on Electron Devices 61 (5), 1583-1589, 2014
Microcontroller Based Smart Home System with Enhanced Appliance Switching Capacity
M Hasan, MH Anik, S Islam
2018 Fifth HCT Information Technology Trends (ITT), 364-367, 2018
Quantum atomistic simulations of nanoelectronic devices using QuADS
S Ahmed, K Yalavarthi, V Gaddipati, A Muntahi, S Sundaresan, ...
Nano-Electronic Devices, 405-441, 2011
Design of a Scalable Low-Power 1-bit Hybrid Full Adder for Fast Computation
M Hasan, MJ Hossein, M Hossain, HU Zaman, S Islam
IEEE Transactions on Circuits and Systems II: Express Briefs, 2019
Low-cost Appliance Switching Circuit for Discarding Technical Issues of Microcontroller Controlled Smart Home
M Hasan, MH Anik, S Chowdhury, SA Chowdhury, TI Bilash, S Islam
International Journal of Sensors and Sensor Networks 7 (2), 16-22, 2019
ACS Nano 5, 7936 (2011)
MH Bae, S Islam, VE Dorgan, E Pop
Gate Diffusion Input technique based full swing and scalable 1-bit hybrid Full Adder for high performance applications
M Hasan, HU Zaman, M Hossain, P Biswas, S Islam
Engineering Science and Technology, an International Journal, 2020
High Speed and Ultra Low Power Design of Carry-Out Bit of 4-Bit Carry Look-Ahead Adder
M Hasan, P Biswas, MDS Alam, HU Zaman, M Hossain, S Islam
2019 10th International Conference on Computing, Communication and …, 2019
Influence of device architecture on the performance of negative capacitance MFMIS transistors
FI Sakib, FE Mullick, S Shahnewaz, S Islam, M Hossain
Semiconductor Science and Technology 35 (2), 025005, 2019
Geometry dependence of the internal fields and its impact on the electronic structure in self-assembled InAs/GaAs quantum dots
S Islam, S Sundaresan, S Ahmed
Submitted to IEEE Trans on NanoTechnology, 2009
Built-in electric fields in InAs/GaAs quantum dots: geometry dependence and effects on the electronic structure
S Sundaresan, S Islam, S Ahmed
2010 IEEE Nanotechnology Materials and Devices Conference, 30-35, 2010
High-field and thermal transport in 2D atomic layer devices
A Serov, VE Dorgan, A Behnam, CD English, Z Li, S Islam, E Pop
Micro-and Nanotechnology Sensors, Systems, and Applications VI 9083, 908307, 2014
DORGAN VINCENT E., POP ERIC:" Scaling of High-Field Transport and Localized Heating in Graphene Transistors", ACS NANO
AMERICAN CHEMICAL SOCIETY 5 (10), 2011-10, 2011
Substrate-dependent high-field transport and self-heating in graphene transistors
S Islam
University of Illinois at Urbana-Champaign, 2015
Influence of Internal Fields on the Electronic Structure in Self-Assembled InAs/GaAs Quantum Dots
S Islam, S Sundaresan, S Ahmed
arXiv preprint arXiv:1005.4110, 2010
Plasmonic corrugated waveguide coupled to a rectangular nano-resonator as an optical filter
M Hasan, F Mayoa, MS Hossain, R Ahmed, M Hossain, K Ali, S Islam
OSA Continuum 3 (12), 3314-3323, 2020
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