| Single atomically sharp lateral monolayer p‐n heterojunction solar cells with extraordinarily high power conversion efficiency ML Tsai, MY Li, JRD Retamal, KT Lam, YC Lin, K Suenaga, LJ Chen, ... Advanced materials 29 (32), 1701168, 2017 | 136 | 2017 |
| Performance limits projection of black phosphorous field-effect transistors KT Lam, Z Dong, J Guo IEEE Electron Device Letters 35 (9), 963-965, 2014 | 109 | 2014 |
| An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges KT Lam, G Liang Applied Physics Letters 92 (22), 2008 | 87 | 2008 |
| Device performance of heterojunction tunneling field-effect transistors based on transition metal dichalcogenide monolayer KT Lam, X Cao, J Guo IEEE electron device letters 34 (10), 1331-1333, 2013 | 81 | 2013 |
| A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel KT Lam, D Seah, SK Chin, SB Kumar, G Samudra, YC Yeo, G Liang IEEE Electron Device Letters 31 (6), 555-557, 2010 | 80 | 2010 |
| Device physics and characteristics of graphene nanoribbon tunneling FETs SK Chin, D Seah, KT Lam, GS Samudra, G Liang IEEE transactions on electron devices 57 (11), 3144-3152, 2010 | 73 | 2010 |
| Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study H Teong, KT Lam, SB Khalid, G Liang Journal of Applied Physics 105 (8), 2009 | 71 | 2009 |
| Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes C Chen, Y Lin, W Zhou, M Gong, Z He, F Shi, X Li, JZ Wu, KT Lam, ... Nature Electronics 4 (9), 653-663, 2021 | 67 | 2021 |
| Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study KT Lam, C Lee, G Liang Applied Physics Letters 95 (14), 2009 | 64 | 2009 |
| Stability and electronic structure of two dimensional Cx (BN) y compound KT Lam, Y Lu, YP Feng, G Liang Applied Physics Letters 98 (2), 2011 | 63 | 2011 |
| Graphene nanoribbons under mechanical strain. C Chen, JZ Wu, KT Lam, G Hong, M Gong, B Zhang, Y Lu, AL Antaris, ... Advanced Materials (Deerfield Beach, Fla.) 27 (2), 303-309, 2014 | 47 | 2014 |
| Ambipolar bistable switching effect of graphene YJ Shin, JH Kwon, G Kalon, KT Lam, CS Bhatia, G Liang, H Yang Applied Physics Letters 97 (26), 2010 | 43 | 2010 |
| Plasmonics in strained monolayer black phosphorus KT Lam, J Guo Journal of Applied Physics 117 (11), 2015 | 39 | 2015 |
| Carbon nanotube Schottky diode: an atomic perspective P Bai, E Li, KT Lam, O Kurniawan, WS Koh Nanotechnology 19 (11), 115203, 2008 | 37 | 2008 |
| Correlation-based detection of attribute outliers JLY Koh, ML Lee, W Hsu, KT Lam Advances in Databases: Concepts, Systems and Applications: 12th …, 2007 | 30 | 2007 |
| Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions KT Lam, G Seol, J Guo Applied Physics Letters 105 (1), 2014 | 26 | 2014 |
| Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight-binding π-bond model SK Chin, KT Lam, D Seah, G Liang Nanoscale research letters 7, 1-7, 2012 | 20 | 2012 |
| Electrostatics of ultimately thin-body tunneling FET using graphene nanoribbon KT Lam, Y Yang, GS Samudra, YC Yeo, G Liang IEEE Electron Device Letters 32 (4), 431-433, 2011 | 17 | 2011 |
| Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes G Liang, SB Khalid, KT Lam Journal of Physics D: Applied Physics 43 (21), 215101, 2010 | 17 | 2010 |
| Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor Y Guo, X Zhang, KL Low, KT Lam, YC Yeo, G Liang IEEE Transactions on Electron Devices 62 (3), 788-794, 2015 | 15 | 2015 |
