Muhammad Usman, PhD
Citata da
Citata da
Time-resolved luminescence studies of proton-implanted GaN
A Pinos, S Marcinkevičius, M Usman, A HallÚn
Applied Physics Letters 95 (11), 112108, 2009
Device design assessment of 4H–SiC n-IGBT–A simulation study
M Usman, M Nawaz
Solid-state electronics 92, 5-11, 2014
Toward the understanding of stacked Al-based high-k dielectrics for passivation of 4H-SiC devices
M Usman, A HallÚn, T Pilvi, A Sch÷ner, M Leskelń
Journal of The Electrochemical Society 158 (1), H75, 2010
Copper phthalocyanine and metal free phthalocyanine bulk heterojunction photodetector
A Farooq, KS Karimov, N Ahmed, T Ali, MK Alamgir, M Usman
Physica B: Condensed Matter 457, 17-21, 2015
Radiation-Hard Dielectrics for 4H–SiC: A Comparison Between SiO2 and Al2O3
M Usman, A HallÚn
IEEE Electron Device Letters 32 (12), 1653-1655, 2011
Low-temperature annealing of radiation-induced degradation in 4H-SiC bipolar junction transistors
A HallÚn, M Nawaz, C Zaring, M Usman, M Domeij, M Ístling
IEEE Electron Device Letters 31 (7), 707-709, 2010
Structural, optical, and electrical characteristics of AlN: Ho thin films irradiated with 700 keV protons
M Usman, M Naeem, N ul Hassan, M Maqbool, I Ahmad, I Ahmad, ...
Applied Surface Science 357, 179-183, 2015
HfO2/Al2O3 bilayered high-k dielectric for passivation and gate insulator in 4H-SiC devices
M Usman, C Henkel, A HallÚn
ECS Journal of Solid State Science and Technology 2 (8), N3087, 2013
Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation
I Ahmad, M Usman, SR Naqvi, J Iqbal, L Bo, Y Long, CF Dee, A Baig
Journal of nanoparticle research 16 (1), 1-8, 2014
Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS
M Usman, M Arshad, SS Suvanam, A HallÚn
Journal of Physics D: Applied Physics 51, 105111, 2018
Re-crystallization of ITO films after carbon irradiation
M Usman, S Khan, M Khan, T Abbas
Applied Surface Science 392, 863-866, 2017
Passivation of SiC device surfaces by aluminum oxide
A HallÚn, M Usman, S Suvanam, C Henkel, D Martin, MK Linnarsson
IOP Conference Series: Materials Science and Engineering 56 (1), 012007, 2014
Surface recombination investigation in thin 4H-SiC layers
K Gulbinas, V Grivickas, HP Mahabadi, M Usman, A Hallen
Materials Science 17 (2), 119-124, 2011
Electrical and structural characterization of ion implanted GaN
M Usman, A Nazir, T Aggerstam, MK Linnarsson, A HallÚn
Nuclear Instruments and Methods in Physics Research Section B: Beamá…, 2009
4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption
SS Suvanam, K Gulbinas, M Usman, MK Linnarson, DM Martin, J Linnros, ...
Journal of Applied Physics 117 (10), 105309, 2015
Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS
M Usman, SS Suvanam, MG Yazdi, M G÷thelid, M Sultan, A HallÚn
Journal of Physics D: Applied Physics 49, 255308, 2016
Ion implantation induced nitrogen defects in GaN
M Usman, A HallÚn, A Nazir
Journal of Physics D: Applied Physics 48 (45), 455107, 2015
Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs
A Ishaq, M Usman, CF Dee, AA Khurram, L Yan, XT Zhou, A Nadeem, ...
Journal of nanoparticle research 15 (4), 1-9, 2013
Position-dependent bulk traps and carrier compensation in 4H-SiC bipolar junction transistors
M Usman, M Nawaz, A Hallen
IEEE transactions on electron devices 60 (1), 178-185, 2012
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
SS Suvanam, M Usman, D Martin, MG Yazdi, M Linnarsson, A Tempez, ...
Applied Surface Science 433, 108-115, 2018
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
Articoli 1–20