R. Alcubilla
R. Alcubilla
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Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency
H Savin, P Repo, G Von Gastrow, P Ortega, E Calle, M Garín, R Alcubilla
Nature nanotechnology 10 (7), 624-628, 2015
Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells
LG Gerling, S Mahato, A Morales-Vilches, G Masmitja, P Ortega, C Voz, ...
Solar Energy Materials and Solar Cells 145, 109-115, 2016
Surface passivation of -type crystalline Si by plasma enhanced chemical vapor deposited amorphous films
I Martın, M Vetter, A Orpella, J Puigdollers, A Cuevas, R Alcubilla
Applied Physics Letters 79 (14), 2199-2201, 2001
Pentacene thin-film transistors with polymeric gate dielectric
J Puigdollers, C Voz, A Orpella, R Quidant, I Martın, M Vetter, R Alcubilla
Organic Electronics 5 (1-3), 67-71, 2004
Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells
LG Gerling, C Voz, R Alcubilla, J Puigdollers
Journal of Materials Research 32, 260-268, 2017
Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells
O Almora, LG Gerling, C Voz, R Alcubilla, J Puigdollers, ...
Solar Energy Materials and Solar Cells 168, 221-226, 2017
Characterization of transition metal oxide/silicon heterojunctions for solar cell applications
LG Gerling, S Mahato, C Voz, R Alcubilla, J Puigdollers
Applied sciences 5 (4), 695-705, 2015
V 2 O x-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
G Masmitjà, LG Gerling, P Ortega, J Puigdollers, I Martín, C Voz, ...
Journal of materials chemistry A 5 (19), 9182-9189, 2017
All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region
M Garín, R Fenollosa, R Alcubilla, L Shi, LF Marsal, F Meseguer
Nature communications 5 (1), 3440, 2014
First use of macroporous silicon loaded with catalyst film for a chemical reaction: A microreformer for producing hydrogen from ethanol steam reforming
J Llorca, A Casanovas, T Trifonov, A Rodríguez, R Alcubilla
Journal of Catalysis 255 (2), 228-233, 2008
Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination
I Mora-Seró, Y Luo, G Garcia-Belmonte, J Bisquert, D Muñoz, C Voz, ...
Solar Energy Materials and Solar Cells 92 (4), 505-509, 2008
Analysis of the conductance transient in thick-film tin oxide gas sensors
X Vilanova, E Llobet, R Alcubilla, JE Sueiras, X Correig
Sensors and Actuators B: Chemical 31 (3), 175-180, 1996
Analysis of the atomic layer deposited Al2O3 field-effect passivation in black silicon
G Von Gastrow, R Alcubilla, P Ortega, M Yli-Koski, S Conesa-Boj, ...
Solar Energy Materials and Solar Cells 142, 29-33, 2015
Copper phthalocyanine thin-film transistors with polymeric gate dielectric
J Puigdollers, C Voz, M Fonrodona, S Cheylan, M Stella, J Andreu, ...
Journal of Non-Crystalline Solids 352 (9-20), 1778-1782, 2006
Electrical characterization of n‐amorphous/p‐crystalline silicon heterojunctions
LF Marsal, J Pallares, X Correig, J Calderer, R Alcubilla
Journal of applied physics 79 (11), 8493-8497, 1996
Characterization of a-Si: H∕ c-Si interfaces by effective-lifetime measurements
M Garin, U Rau, W Brendle, I Martin, R Alcubilla
Journal of Applied Physics 98 (9), 2005
Pentacene thin-films obtained by thermal evaporation in high vacuum
J Puigdollers, C Voz, A Orpella, I Martin, M Vetter, R Alcubilla
Thin solid films 427 (1-2), 367-370, 2003
Growth of plasmonic gold nanostructures by electron beam induced deposition
S Graells, R Alcubilla, G Badenes, R Quidant
Applied Physics Letters 91 (12), 2007
Fabrication of silicon oxide microneedles from macroporous silicon
A Rodriguez, D Molinero, E Valera, T Trifonov, LF Marsal, J Pallarès, ...
Sensors and Actuators B: Chemical 109 (1), 135-140, 2005
Effects of symmetry reduction in two-dimensional square and triangular lattices
T Trifonov, LF Marsal, A Rodriguez, J Pallares, R Alcubilla
Physical Review B 69 (23), 235112, 2004
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