Saeed Zeinolabedinzadeh
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Citata da
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A comparison of the degradation in RF performance due to device interconnects in advanced SiGe HBT and CMOS technologies
RL Schmid, A Ulusoy, S Zeinolabedinzadeh, JD Cressler
IEEE Transactions on Electron Devices 62 (6), 1803-1810, 2015
452015
Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs
I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, ...
IEEE Transactions on Nuclear Science 61 (6), 3218-3225, 2014
292014
Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology
S Zeinolabedinzadeh, P Song, M Kaynak, M Kamarei, B Tillack, ...
2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-4, 2014
232014
Low standby power and robust finfet based sram design
B Ebrahimi, S Zeinolabedinzadeh, A Afzali-Kusha
2008 IEEE Computer Society Annual Symposium on VLSI, 185-190, 2008
222008
A highly-efficient 138–170 GHz SiGe HBT frequency doubler for power-constrained applications
C Coen, S Zeinolabedinzadeh, M Kaynak, B Tillack, JD Cressler
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 23-26, 2016
212016
A 0.3–15 GHz SiGe LNA with> 1 THz gain-bandwidth product
S Zeinolabedinzadeh, A Ulusoy, MA Oakley, NE Lourenco, JD Cressler
IEEE Microwave and Wireless Components Letters 27 (4), 380-382, 2017
142017
A 314 GHz, fully-integrated SiGe transmitter and receiver with integrated antenna
S Zeinolabedinzadeh, M Kaynak, W Khan, M Kamarei, B Tillack, ...
2014 IEEE Radio Frequency Integrated Circuits Symposium, 361-364, 2014
142014
An investigation of single-event effect modeling techniques for a SiGe RF low-noise amplifier
NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ...
IEEE Transactions on Nuclear Science 63 (1), 273-280, 2016
122016
Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian pulse generator
F Inanlou, NE Lourenco, ZE Fleetwood, I Song, DC Howard, A Cardoso, ...
IEEE Transactions on Nuclear Science 61 (6), 3050-3054, 2014
122014
W-band SiGe power amplifiers
P Song, A Ulusoy, RL Schmid, SN Zeinolabedinzadeh, JD Cressler
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 151-154, 2014
112014
A 0.32-THz SiGe imaging array with polarization diversity
Z Li, B Qi, X Zhang, S Zeinolabedinzadeh, L Sang, JD Cressler
IEEE Transactions on Terahertz Science and Technology 8 (2), 215-223, 2018
102018
Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology
S Zeinolabedinzadeh, I Song, US Raghunathan, NE Lourenco, ...
IEEE Transactions on Nuclear Science 62 (6), 2657-2665, 2015
92015
An investigation of fTand fmaxdegradation due to device interconnects in 0.5 THz SiGe HBT technology
A Ulusoy, RL Schmid, S Zeinolabedinzadeh, WT Khan, M Kaynak, ...
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 211-214, 2014
92014
SiGe technology as a millimeter-wave platform: scaling issues, reliability physics, circuit performance, and new opportunities
JD Cressler, C Coen, S Zeinolabedinzadeh, P Song, R Schmid, M Oakley, ...
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-13, 2016
82016
On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology
AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ...
IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015
82015
Compact, low-power, single-ended and differential SiGe W-band LNAs
F Inanlou, W Khan, P Song, S Zeinolabedinzadeh, RL Schmid, T Chi, ...
2014 9th European Microwave Integrated Circuit Conference, 452-455, 2014
82014
Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform
PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ...
IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018
72018
Single-event effects in high-frequency linear amplifiers: experiment and analysis
S Zeinolabedinzadeh, H Ying, ZE Fleetwood, NJH Roche, A Khachatrian, ...
IEEE Transactions on Nuclear Science 64 (1), 125-132, 2016
62016
Revisiting safe operating area: SiGe HBT aging models for reliability-aware circuit design
BR Wier, RP Martinez, US Raghunathan, H Ying, S Zeinolabedinzadeh, ...
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and…, 2018
52018
Single-event effects in a millimeter-wave receiver front-end implemented in 90 nm, 300 GHz SiGe HBT technology
S Zeinolabedinzadeh, AC Ulusoy, F Inanlou, H Ying, Y Gong, ...
IEEE Transactions on Nuclear Science 64 (1), 536-543, 2016
52016
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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