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Robert A. Weller
Robert A. Weller
Verified email at vanderbilt.edu
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Cited by
Year
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...
IEEE Electron Device Letters 22 (4), 176-178, 2001
7642001
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...
Applied Physics Letters 76 (13), 1713-1715, 2000
5532000
Monte Carlo simulation of single event effects
RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ...
IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010
2532010
Impact of low-energy proton induced upsets on test methods and rate predictions
BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ...
IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009
1982009
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ...
IEEE transactions on nuclear science 52 (6), 2125-2131, 2005
1872005
Sputtering of the gallium-indium eutectic alloy in the liquid phase
MF Dumke, TA Tombrello, RA Weller, RM Housley, EH Cirlin
Surface Science 124 (2-3), 407-422, 1983
1741983
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ...
IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003
1712003
Impact of ion energy and species on single event effects analysis
RA Reed, RA Weller, MH Mendenhall, JM Lauenstein, KM Warren, ...
IEEE Transactions on Nuclear Science 54 (6), 2312-2321, 2007
1362007
Multiple-bit upset in 130 nm CMOS technology
AD Tipton, JA Pellish, RA Reed, RD Schrimpf, RA Weller, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 53 (6), 3259-3264, 2006
1332006
Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits
PE Dodd, JR Schwank, MR Shaneyfelt, JA Felix, P Paillet, ...
IEEE Transactions on Nuclear Science 54 (6), 2303-2311, 2007
1322007
Muon-induced single event upsets in deep-submicron technology
BD Sierawski, MH Mendenhall, RA Reed, MA Clemens, RA Weller, ...
IEEE Transactions on Nuclear Science 57 (6), 3273-3278, 2010
1302010
Characterization and modeling of the nitrogen passivation of interface traps in
K McDonald, RA Weller, ST Pantelides, LC Feldman, GY Chung, CC Tin, ...
Journal of Applied Physics 93 (5), 2719-2722, 2003
1202003
Fowler–Nordheim hole tunneling in structures
RK Chanana, K McDonald, M Di Ventra, ST Pantelides, LC Feldman, ...
Applied Physics Letters 77 (16), 2560-2562, 2000
1192000
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers
AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RA Weller, BD White, ...
IEEE Transactions on Nuclear Science 51 (6), 3801-3806, 2004
1032004
Sputtering of uranium tetrafluoride in the electronic stopping region
JE Griffith, RA Weller, LE Seiberling, TA Tombrello
Radiation Effects 51 (3-4), 223-231, 1980
1021980
An algorithm for computing screened Coulomb scattering in Geant4
MH Mendenhall, RA Weller
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005
972005
Application of RADSAFE to Model the Single Event Upset Response of a 0.25 m CMOS SRAM
KM Warren, RA Weller, BD Sierawski, RA Reed, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 54 (4), 898-903, 2007
902007
Role of heavy-ion nuclear reactions in determining on-orbit single event error rates
CL Howe, RA Weller, RA Reed, MH Mendenhall, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 52 (6), 2182-2188, 2005
892005
Effects of scaling on muon-induced soft errors
BD Sierawski, RA Reed, MH Mendenhall, RA Weller, RD Schrimpf, ...
2011 International Reliability Physics Symposium, 3C. 3.1-3C. 3.6, 2011
882011
Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors
G Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, RK Chanana, ...
Applied Physics Letters 77 (22), 3601-3603, 2000
852000
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