Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ...
US Patent 8,778,448, 2014
420 2014 Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ...
US Patent 9,099,585, 2015
417 2015 METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES AJ Kellock, H Kim, DG Park, SV Nitta, S Purushothaman, S Rossnagel, ...
US Patent App. 12/203,338, 2010
415 2010 Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ...
IEEE Electron Device Letters 31 (7), 731-733, 2010
281 2010 High- MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ...
IEEE Electron Device Letters 31 (4), 275-277, 2010
238 2010 Method of forming a metal gate in a semiconductor device using atomic layer deposition process 2007 DG Park, HJ Cho, KY Lim - US Patent 7,157,359
US Patent 20,020,086,507, 0
192 * Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition H Kim, C Detavenier, O Van der Straten, SM Rossnagel, AJ Kellock, ...
Journal of applied physics 98 (1), 2005
160 2005 Characteristics of n {sup+} polycrystalline-Si/Al {sub 2} O {sub 3}/Si metal {endash} oxide {endash} semiconductor structures prepared by atomic layer chemical vapor deposition … DG Park, HJ Cho, KY Lim, C Lim, IS Yeo, JS Roh, JW Park
Journal of Applied Physics 89 (11), 2001
150 2001 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
129 2011 High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing M Chudzik, B Doris, R Mo, J Sleight, E Cartier, C Dewan, D Park, H Bu, ...
2007 IEEE symposium on VLSI technology, 194-195, 2007
119 2007 Method of manufacturing semiconductor devices with titanium aluminum nitride work function DG Park, TH Cha, SA Jang, HJ Cho, TK Kim, KY Lim, IS Yeo, JW Park
US Patent 6,506,676, 2003
102 2003 Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor structures prepared by atomic layer chemical vapor deposition using Al (CH3) 3 and H2O vapor DG Park, HJ Cho, KY Lim, C Lim, IS Yeo, JS Roh, JW Park
Journal of Applied Physics 89 (11), 6275-6280, 2001
100 2001 finFETS and methods of making same KK Chan, TS Kanarsky, J Li, CQ Ouyang, DG Park, Z Ren, X Wang, H Yin
US Patent 8,043,920, 2011
97 2011 Electrical conduction in silicon nitrides deposited by plasma enhanced chemical vapour deposition M Tao, D Park, SN Mohammad, D Li, AE Botchkerav, H Morkoç
Philosophical Magazine B 73 (4), 723-736, 1996
88 1996 FinFET with longitudinal stress in a channel KK Chan, QC Ouyang, DG Park, X Wang
US Patent 7,872,303, 2011
83 2011 Gate quality Si3 N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor‐based metal–insulator … DG Park, M Tao, D Li, AE Botchkarev, Z Fan, Z Wang, SN Mohammad, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
81 1996 Boron penetration in DG Park, HJ Cho, IS Yeo, JS Roh, JM Hwang
Applied Physics Letters 77 (14), 2207-2209, 2000
73 2000 High-temperature stable gate structure with metallic electrode DG Park, OG Gluschenkov, MA Gribelyuk, KH Wong
US Patent 7,279,413, 2007
72 2007 Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs H Miki, N Tega, M Yamaoka, DJ Frank, A Bansal, M Kobayashi, K Cheng, ...
2012 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2012
70 2012 The physical properties of cubic plasma-enhanced atomic layer deposition TaN films H Kim, C Lavoie, M Copel, V Narayanan, DG Park, SM Rossnagel
Journal of applied physics 95 (10), 5848-5855, 2004
67 2004 