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Rouzbeh Molaei Imenabadi
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A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance
RM Imenabadi, M Saremi, WG Vandenberghe
IEEE transactions on electron devices 64 (11), 4752-4758, 2017
1172017
A resonant tunneling nanowire field effect transistor with physical contractions: a negative differential resistance device for low power very large scale integration applications
RMI Abadi, M Saremi
Journal of Electronic Materials 47 (2), 1091-1098, 2017
62*2017
Minimizing performance degradation induced by interfacial recombination in perovskite solar cells through tailoring of the transport layer electronic properties
L Xu, R Molaei Imenabadi, WG Vandenberghe, JWP Hsu
APL Materials 6 (3), 036104, 2018
352018
Representation of type I heterostructure junctionless tunnel field effect transistor for high-performance logic application
RMI Abadi, SAS Ziabari
Applied Physics A 122 (6), 616, 2016
27*2016
Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach
RMI Abadi, SAS Ziabari
Applied Physics A 122 (11), 988-996, 2016
262016
Representation of strained gate-all-around junctionless tunneling nanowire filed effect transistor for analog applications
RMI Abadi, SAS Ziabari
Microelectronic Engineering 162, 12-16, 2016
232016
Importance of separating contacts from the photosensitive layer in heterojunction phototransistors
RM Imenabadi, A Saadat, TB Daunis, LNS Murthy, ML Van de Put, ...
Superlattices and Microstructures 148, 106713, 2020
22020
A Comparative Numerical Study of Junctionless and pin Tunneling Carbon Nanotube Field Effect Transistor
RMI Abadi, SA Sedigh Ziabari
Journal of Nano Research 45, 55-75, 2017
22017
Indium oxide-based photo field-effect transistor with polymeric photosensitive gate
WV R.M. Imenabadi, M.L. Van de Put, T.B. Daunis, L. Xu, N.S. Murthy, J.W.P. Hsu
IEEE SISC 5, 435–437, 2017
12017
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