Conductivity-dependent dielectric properties and microwave absorption of Al-doped SiC whiskers J Kuang, P Jiang, F Ran, W Cao
Journal of Alloys and Compounds 687, 227-231, 2016
97 2016 n -type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping routeFY Ran, Z Xiao, Y Toda, H Hiramatsu, H Hosono, T Kamiya
Scientific Reports 5 (1), 10428, 2015
73 2015 Ferromagnetism in Cu-doped AlN films FY Ran, M Subramanian, M Tanemura, Y Hayashi, T Hihara
Applied Physics Letters 95 (11), 2009
63 2009 Route to n-type doping in SnS Z Xiao, FY Ran, H Hosono, T Kamiya
Applied Physics Letters 106 (15), 2015
56 2015 Effect of annealing temperature on optical properties of Er-doped ZnO films prepared by sol–gel method F Ran, L Miao, S Tanemura, M Tanemura, Y Cao, S Tanaka, N Shibata
Materials Science and Engineering: B 148 (1-3), 35-39, 2008
51 2008 Growth of high-quality SnS epitaxial films by H2S flow pulsed laser deposition FY Ran, Z Xiao, H Hiramatsu, H Hosono, T Kamiya
Applied Physics Letters 104 (7), 2014
44 2014 Narrow Bandgap in β-BaZn2 As2 and Its Chemical Origins Z Xiao, H Hiramatsu, S Ueda, Y Toda, FY Ran, J Guo, H Lei, S Matsuishi, ...
Journal of the American Chemical Society 136 (42), 14959-14965, 2014
42 2014 Effect of substrate temperature on the room-temperature ferromagnetism of Cu-doped ZnO films FY Ran, M Tanemura, Y Hayashi, T Hihara
Journal of crystal growth 311 (17), 4270-4274, 2009
37 2009 A novel inorganic precipitation–peptization method for VO2 sol and VO2 nanoparticles preparation: Synthesis, characterization and mechanism Y Li, P Jiang, W Xiang, F Ran, W Cao
Journal of colloid and interface science 462, 42-47, 2016
23 2016 Effects of Pb doping on hole transport properties and thin-film transistor characteristics of SnO thin films M Liao, Z Xiao, FY Ran, H Kumomi, T Kamiya, H Hosono
ECS Journal of Solid State Science and Technology 4 (3), Q26, 2015
23 2015 Angle-resolved photoemission study of Fe3O4 (0 0 1) films across Verwey transition FY Ran, Y Tsunemaru, T Hasegawa, Y Takeichi, A Harasawa, K Yaji, ...
Journal of Physics D: Applied Physics 45 (27), 275002, 2012
22 2012 SnS thin films prepared by H2S-free process and its p-type thin film transistor FY Ran, Z Xiao, H Hiramatsu, K Ide, H Hosono, T Kamiya
AIP Advances 6 (1), 2016
21 2016 Valence band structure and magnetic properties of Co-doped Fe3O4 (100) films FY Ran, Y Tsunemaru, T Hasegawa, Y Takeichi, A Harasawa, K Yaji, ...
Journal of applied physics 109 (12), 2011
21 2011 Analyses of Surface and Interfacial Layers in Polycrystalline Thin-Film Transistors FY Ran, M Taniguti, H Hosono, T Kamiya
Journal of Display Technology 11 (9), 720-724, 2015
18 2015 Epitaxial growth and electronic structure of a layered zinc pnictide semiconductor, β-BaZn2As2 Z Xiao, FY Ran, H Hiramatsu, S Matsuishi, H Hosono, T Kamiya
Thin Solid Films 559, 100-104, 2014
17 2014 Photocatalytic degradation of methylene blue aqueous solution under visible light irradiation by using N-doped titanium dioxide YH Li, WB Cao, FY Ran, XN Zhang
Key Engineering Materials 336, 1972-1975, 2007
17 2007 Detection of dead layers and defects in polycrystalline Cu2O thin-film transistors by x-ray reflectivity and photoresponse spectroscopy analyses FY Ran, H Hiramatsu, H Hosono, T Kamiya, M Taniguti
Journal of Vacuum Science & Technology B 33 (5), 2015
16 2015 Room‐temperature ferromagnetism of Cu‐doped ZnO films deposited by helicon magnetron sputtering FY Ran, M Imaoka, M Tanemura, Y Hayashi, TS Herng, SP Lau
physica status solidi (b) 246 (6), 1243-1247, 2009
16 2009 Multiple states and roles of hydrogen in p-type SnS semiconductors Z Xiao, FY Ran, M Liao, H Hiramatsu, K Ide, H Hosono, T Kamiya
Physical Chemistry Chemical Physics 20 (32), 20952-20956, 2018
13 2018 Influence of Annealing on the Structure and 1.54 µm Photoluminescence of Er-Doped ZnO Thin Films Prepared by Sol–Gel Method L Miao, X Xiao, F Ran, S Tanemura, G Xu
Japanese Journal of Applied Physics 50 (6R), 061101, 2011
11 2011