Giordano Scappucci
Giordano Scappucci
QuTech, TU Delft
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Cited by
Cited by
Strong spin-photon coupling in silicon
N Samkharadze, G Zheng, N Kalhor, D Brousse, A Sammak, UC Mendes, ...
Science 359 (6380), 1123-1127, 2018
Realization of atomically controlled dopant devices in silicon
FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh, L Oberbeck, ...
Small 3 (4), 563-567, 2007
Fast two-qubit logic with holes in germanium
NW Hendrickx, DP Franke, A Sammak, G Scappucci, M Veldhorst
Nature 577 (7791), 487-491, 2020
Rapid gate-based spin read-out in silicon using an on-chip resonator
G Zheng, N Samkharadze, ML Noordam, N Kalhor, D Brousse, A Sammak, ...
Nature nanotechnology 14 (8), 742-746, 2019
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium
G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons
Nano letters, 2011
Gate-controlled quantum dots and superconductivity in planar germanium
NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 1-7, 2018
Exploring the limits of N-type ultra-shallow junction formation
CM Polley, WR Clarke, JA Miwa, G Scappucci, JW Wells, DL Jaeger, ...
ACS nano 7 (6), 5499-5505, 2013
Ultradense phosphorus in germanium delta-doped layers
G Scappucci, G Capellini, WCT Lee, MY Simmons
Applied Physics Letters 94 (16), 162106, 2009
The germanium quantum information route
G Scappucci, C Kloeffel, FA Zwanenburg, D Loss, M Myronov, JJ Zhang, ...
Nature Reviews Materials, 1-18, 2020
New avenues to an old material: controlled nanoscale doping of germanium
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanoscale 5 (7), 2600-2615, 2013
Quantum dot arrays in silicon and germanium
WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ...
Applied Physics Letters 116 (8), 080501, 2020
Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanotechnology 22 (37), 375203, 2011
Germanium quantum-well Josephson field-effect transistors and interferometers
F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ...
Nano letters 19 (2), 1023-1027, 2019
Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology
A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ...
Advanced Functional Materials 29 (14), 1807613, 2019
A four-qubit germanium quantum processor
NW Hendrickx, WIL Lawrie, M Russ, F van Riggelen, SL de Snoo, ...
Nature 591 (7851), 580-585, 2021
Preparation of the Ge (001) surface towards fabrication of atomic-scale germanium devices
WM Klesse, G Scappucci, G Capellini, MY Simmons
Nanotechnology 22 (14), 145604, 2011
A single-hole spin qubit
NW Hendrickx, WIL Lawrie, L Petit, A Sammak, G Scappucci, M Veldhorst
Nature communications 11 (1), 1-6, 2020
Atomic-scale silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, W Pok, T Hallam, MJ Butcher, ...
International journal of nanotechnology 5 (2-3), 352-369, 2008
Influence of encapsulation temperature on Ge:P -doped layers
G Scappucci, G Capellini, MY Simmons
Physical Review B 80 (23), 233202, 2009
Single-electron transistor based on modulation-doped SiGe heterostructures
A Notargiacomo, L Di Gaspare, G Scappucci, G Mariottini, F Evangelisti, ...
Applied physics letters 83 (2), 302-304, 2003
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