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Soltani Ali
Soltani Ali
Associate professor
Verified email at univ-lille.fr
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193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors
A Soltani, HA Barkad, M Mattalah, B Benbakhti, JC De Jaeger, YM Chong, ...
Applied Physics Letters 92 (5), 2008
1162008
193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors
A Soltani, HA Barkad, M Mattalah, B Benbakhti, JC De Jaeger, YM Chong, ...
Applied Physics Letters 92 (5), 2008
1162008
Recent developments of wide-bandgap semiconductor based UV sensors
A Benmoussa, A Soltani, U Schühle, K Haenen, YM Chong, WJ Zhang, ...
Diamond and Related Materials 18 (5-8), 860-864, 2009
1092009
LYRA, a solar UV radiometer on Proba2
JF Hochedez, W Schmutz, Y Stockman, U Schühle, A Benmoussa, ...
Advances in Space Research 37 (2), 303-312, 2006
952006
Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems
Y Halfaya, C Bishop, A Soltani, S Sundaram, V Aubry, PL Voss, ...
Sensors 16 (3), 273, 2016
802016
Effects of self-heating on performance degradation in AlGaN/GaN-based devices
B Benbakhti, A Soltani, K Kalna, M Rousseau, JC De Jaeger
IEEE transactions on electron devices 56 (10), 2178-2185, 2009
762009
Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz
A Soltani, JC Gerbedoen, Y Cordier, D Ducatteau, M Rousseau, ...
IEEE electron device letters 34 (4), 490-492, 2013
662013
Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: photoemission assessments
A BenMoussa, JF Hochedez, R Dahal, J Li, JY Lin, HX Jiang, A Soltani, ...
Applied Physics Letters 92 (2), 2008
652008
AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz
A Minko, V Hoel, E Morvan, B Grimbert, A Soltani, E Delos, D Ducatteau, ...
IEEE Electron Device Letters 25 (7), 453-455, 2004
602004
The effect of oxidation on physical properties of porous silicon layers for optical applications
P Pirasteh, J Charrier, A Soltani, S Haesaert, L Haji, C Godon, N Errien
Applied Surface Science 253 (4), 1999-2002, 2006
552006
Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ...
Nature communications 10 (1), 4322, 2019
542019
Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure
N Tiercelin, A Talbi, V Preobrazhensky, P Pernod, V Mortet, K Haenen, ...
Applied Physics Letters 93 (16), 2008
532008
Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT
A Soltani, A BenMoussa, S Touati, V Hoel, JC De Jaeger, J Laureyns, ...
Diamond and related materials 16 (2), 262-266, 2007
512007
New developments on diamond photodetector for VUV solar observations
A Benmoussa, A Soltani, K Haenen, U Kroth, V Mortet, HA Barkad, ...
Semiconductor science and technology 23 (3), 035026, 2008
462008
Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
M Boucherit, A Soltani, E Monroy, M Rousseau, D Deresmes, M Berthe, ...
Applied Physics Letters 99 (18), 2011
452011
Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT
C Bishop, Y Halfaya, A Soltani, S Sundaram, X Li, J Streque, Y El Gmili, ...
IEEE Sensors Journal 16 (18), 6828-6838, 2016
442016
Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors
M Boucherit, OF Shoron, TA Cain, CA Jackson, S Stemmer, S Rajan
Applied Physics Letters 102 (24), 2013
442013
Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
WH Goh, G Patriarche, PL Bonanno, S Gautier, T Moudakir, M Abid, ...
Journal of Crystal Growth 315 (1), 160-163, 2011
432011
AlGaN/GaN MISHEMT with hBN as gate dielectric
JC Gerbedoen, A Soltani, M Mattalah, M Moreau, P Thevenin, ...
Diamond and related materials 18 (5-8), 1039-1042, 2009
432009
Deep structural analysis of novel BGaN material layers grown by MOVPE
S Gautier, G Patriarche, T Moudakir, M Abid, G Orsal, K Pantzas, ...
Journal of crystal growth 315 (1), 288-291, 2011
422011
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