Direct Chemical Vapor Deposition Growth of WS2 Atomic Layers on Hexagonal Boron Nitride M Okada, T Sawazaki, K Watanabe, T Taniguch, H Hibino, H Shinohara, ...
ACS nano 8 (8), 8273-8277, 2014
342 2014 Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS2 /MoS2 /hBN M Okada, A Kutana, Y Kureishi, Y Kobayashi, Y Saito, T Saito, ...
ACS nano 12 (3), 2498-2505, 2018
127 2018 Suppression of exciton-exciton annihilation in tungsten disulfide monolayers encapsulated by hexagonal boron nitrides Y Hoshi, T Kuroda, M Okada, R Moriya, S Masubuchi, K Watanabe, ...
Physical Review B 95 (24), 241403, 2017
120 2017 Gas-Source CVD Growth of Atomic Layered WS 2 from WF 6 and H 2 S Precursors with High Grain Size Uniformity M Okada, N Okada, WH Chang, T Endo, A Ando, T Shimizu, T Kubo, ...
Scientific reports 9, 17678, 2019
40 2019 Observation of biexcitonic emission at extremely low power density in tungsten disulfide atomic layers grown on hexagonal boron nitride M Okada, Y Miyauchi, K Matsuda, T Taniguchi, K Watanabe, H Shinohara, ...
Scientific reports 7, 322, 2017
40 2017 Blister-based-laser-induced-forward-transfer: A non-contact, dry laser-based transfer method for nanomaterials NT Goodfriend, SY Heng, OA Nerushev, AV Gromov, AV Bulgakov, ...
Nanotechnology 29 (38), 385301, 2018
20 2018 Enhanced Exciton–Exciton Collisions in an Ultraflat Monolayer MoSe2 Prepared through Deterministic Flattening T Hotta, A Ueda, S Higuchi, M Okada, T Shimizu, T Kubo, K Ueno, ...
ACS nano, 2020
14 2020 Enhanced exciton-exciton collisions in an ultra-flat monolayer MoSe2 prepared through deterministic flattening T Hotta, A Ueda, S Higuchi, M Okada, T Shimizu, T Kubo, K Ueno, ...
arXiv preprint arXiv:2006.02640, 2020
14 2020 Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition M Okada, J Pu, YC Lin, T Endo, N Okada, WH Chang, AKA Lu, ...
ACS nano 16 (8), 13069-13081, 2022
13 2022 CVD grown bilayer WSe2/MoSe2 heterostructures for high performance tunnel transistors T Irisawa, N Okada, WH Chang, M Okada, T Mori, T Endo, Y Miyata
Japanese Journal of Applied Physics 59 (SG), SGGH05, 2020
13 2020 Micrometer-scale WS2 atomic layers grown by alkali metal free gas-source chemical vapor deposition with H2S and WF6 precursors M Okada, N Okada, WH Chang, T Shimizu, T Kubo, M Ishihara, T Irisawa
Japanese Journal of Applied Physics 60 (SB), SBBH09, 2021
11 2021 Growth of MoS2 –Nb-doped MoS2 lateral homojunctions: A monolayer p –n diode by substitutional doping M Okada, N Nagamura, T Matsumura, Y Ando, AKA Lu, N Okada, ...
APL Materials 9 (12), 121115, 2021
10 2021 Monolayer MoS 2 growth at the Au–SiO 2 interface HE Lim, T Irisawa, N Okada, M Okada, T Endo, Y Nakanishi, Y Maniwa, ...
Nanoscale 11 (42), 19700-19704, 2019
9 2019 Dark-state impact on the exciton recombination of T Kuroda, Y Hoshi, S Masubuchi, M Okada, R Kitaura, K Watanabe, ...
Physical Review B 102 (19), 195407, 2020
8 2020 Effect of a pick-and-drop process on optical properties of a CVD-grown monolayer tungsten disulfide Y Hoshi, M Okada, R Moriya, S Masubuchi, K Watanabe, T Taniguchi, ...
Physical Review Materials 2 (6), 064003, 2018
8 2018 Femtosecond photoluminescence from monolayer K Saito, M Okada, R Kitaura, H Kishida, T Koyama
Physical Review B 103 (20), L201401, 2021
7 2021 Low frequency Raman study of interlayer couplings in WS 2-MoS 2 van der Waals heterostructures Y Saito, T Kondo, H Ito, M Okada, T Shimizu, T Kubo, R Kitaura
Japanese Journal of Applied Physics 59 (6), 062004, 2020
7 2020 Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures M Okada, M Maruyama, S Okada, JH Warner, Y Kureishi, Y Uchiyama, ...
ACS Omega 5 (49), 31692–31699, 2020
5 2020 Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures M Okada, M Maruyama, S Okada, JH Warner, Y Kureishi, Y Uchiyama, ...
arXiv preprint arXiv:2004.13260, 2020
5 2020 Fabrication of layer-by-layer graphene oxide thin film on copper substrate by electrophoretic deposition N Ye, S Ohnishi, M Okada, K Hatakeyama, K Seki, T Kubo, T Shimizu
Japanese Journal of Applied Physics 59 (12), 125001, 2020
4 2020 
Kitaura, RyoNational Institute for Materials Science (NIMS)Email verificata su nims.go.jp
