| Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity K Park, C Bayram Applied Physics Letters 109 (15), 2016 | 45 | 2016 |
| Electron scattering via interface optical phonons with high group velocity in wurtzite GaN-based quantum well heterostructure K Park, A Mohamed, M Dutta, MA Stroscio, C Bayram Scientific reports 8 (1), 15947, 2018 | 19 | 2018 |
| Effects of suboxide layers on the electronic properties of Si (100)/SiO2 interfaces: Atomistic multi-scale approach BH Kim, G Kim, K Park, M Shin, YC Chung, KR Lee Journal of Applied Physics 113 (7), 2013 | 18 | 2013 |
| Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance K Park, C Bayram Journal of Applied Physics 126 (18), 2019 | 16 | 2019 |
| Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model K Park, MA Stroscio, C Bayram Journal of Applied Physics 121 (24), 2017 | 15 | 2017 |
| Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures A Mohamed, K Park, C Bayram, M Dutta, M Stroscio PloS one 14 (4), e0214971, 2019 | 10 | 2019 |
| Contribution of remote interface polar phonons in the hole mobility of diamond G Bonomo, A Mohamed, S Farid, K Park, M Dutta, MA Stroscio Diamond and Related Materials 101, 107650, 2020 | 7 | 2020 |
| Phonon-assisted reduction of hot spot temperature in AlInN ternaries A Mohamed, K Park, C Bayram, M Dutta, MA Stroscio Journal of Physics D: Applied Physics 53 (36), 365102, 2020 | 4 | 2020 |
| On the generation, dissipation, and transport of heat in GaN materials for advanced high-power devices K Park University of Illinois at Urbana-Champaign, 2020 | | 2020 |
| Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer C Bayram, RW Grady, K Park | | 2019 |
| Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer C Bayram, RW Grady, K Park US Patent 10,211,328, 2019 | | 2019 |
| Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology C Bayram, R Grady, K Park Quantum Sensing and Nano Electronics and Photonics XV 10540, 180-187, 2018 | | 2018 |
| Electron momentum relaxation rates via Frohlich interaction with polar-optical-phonons in bulk wurtzite gallium nitride K Park, MA Stroscio, C Bayram | | |
