| Equilibrium and adhesion of Nb/sapphire: The effect of oxygen partial pressure IG Batyrev, A Alavi, MW Finnis Physical Review B 62 (7), 4698, 2000 | 207 | 2000 |
| Ab initio calculations on the Al 2 O 3 (0001) surface I Batyrev, A Alavi, MW Finnis Faraday Discussions 114, 33-43, 1999 | 168 | 1999 |
| Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN SH Wei, X Nie, IG Batyrev, SB Zhang Physical Review B 67 (16), 165209, 2003 | 137 | 2003 |
| Borderline Magic Clustering: The Fabrication of Tetravalent Pb Cluster Arrays on Surfaces SC Li, JF Jia, RF Dou, QK Xue, IG Batyrev, SB Zhang Physical review letters 93 (11), 116103, 2004 | 118 | 2004 |
| Tip size effect on the appearance of a STM image for complex surfaces: Theory versus experiment for YL Wang, HJ Gao, HM Guo, HW Liu, IG Batyrev, WE McMahon, SB Zhang Physical Review B 70 (7), 073312, 2004 | 84 | 2004 |
| In-plane relaxation of Cu(111) and (0001) interfaces IG Batyrev, L Kleinman Physical Review B 64 (3), 033410, 2001 | 80 | 2001 |
| Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ... Materials science forum 527, 935-948, 2006 | 73 | 2006 |
| Effects of device aging on microelectronics radiation response and reliability DM Fleetwood, MP Rodgers, L Tsetseris, XJ Zhou, I Batyrev, S Wang, ... Microelectronics Reliability 47 (7), 1075-1085, 2007 | 61 | 2007 |
| Reactions of water molecules in silica-based network glasses IG Batyrev, B Tuttle, DM Fleetwood, RD Schrimpf, L Tsetseris, ... Physical review letters 100 (10), 105503, 2008 | 59 | 2008 |
| Magnetism of the V (001) surface: Contradictory results from pseudopotential and linearized augmented plane-wave calculations IG Batyrev, JH Cho, L Kleinman Physical Review B 63 (17), 172420, 2001 | 46 | 2001 |
| Hydrogen effects in MOS devices L Tsetseris, DM Fleetwood, RD Schrimpf, XJ Zhou, IG Batyrev, ... Microelectronic engineering 84 (9-10), 2344-2349, 2007 | 42 | 2007 |
| Hydrogen shuttling near Hf-defect complexes in Si∕ SiO2∕ HfO2 structures AG Marinopoulos, I Batyrev, XJ Zhou, RD Schrimpf, DM Fleetwood, ... Applied Physics Letters 91 (23), 2007 | 36 | 2007 |
| The effects of aging on MOS irradiation and annealing response MP Rodgers, DM Fleetwood, RD Schrimpf, IG Batyrev, S Wang, ... IEEE transactions on nuclear science 52 (6), 2642-2648, 2005 | 35 | 2005 |
| Performance, reliability, radiation effects, and aging issues in microelectronics–From atomic-scale physics to engineering-level modeling ST Pantelides, L Tsetseris, MJ Beck, SN Rashkeev, G Hadjisavvas, ... Solid-State Electronics 54 (9), 841-848, 2010 | 33 | 2010 |
| Effects of water on the aging and radiation response of MOS devices IG Batyrev, MP Rodgers, DM Fleetwood, RD Schrimpf, ST Pantelides IEEE transactions on nuclear science 53 (6), 3629-3635, 2006 | 33 | 2006 |
| 5-7-5 line defects on : A general stress-relief mechanism for V/IV surfaces WE McMahon, IG Batyrev, T Hannappel, JM Olson, SB Zhang Physical Review B 74 (3), 033304, 2006 | 26 | 2006 |
| Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling IG Batyrev, D Hughart, R Durand, M Bounasser, BR Tuttle, DM Fleetwood, ... IEEE Transactions on Nuclear Science 55 (6), 3039-3045, 2008 | 25 | 2008 |
| Stabilization of pentazolate anions in the high-pressure compounds Na 2 N 5 and NaN 5 and in the sodium pentazolate framework NaN 5· N 2 M Bykov, E Bykova, S Chariton, VB Prakapenka, IG Batyrev, ... Dalton Transactions 50 (21), 7229-7237, 2021 | 21 | 2021 |
| Density functional theory and evolution algorithm calculations of elastic properties of AlON IG Batyrev, DE Taylor, GA Gazonas, JW McCauley Journal of Applied Physics 115 (2), 2014 | 21 | 2014 |
| The structure of dislocations in (In, Al, Ga) N wurtzite films grown epitaxially on (0001) or (112¯ 2) GaN or AlN substrates KA Jones, IG Batyrev Journal of Applied Physics 112 (11), 2012 | 21 | 2012 |
