Equilibrium and adhesion of Nb/sapphire: The effect of oxygen partial pressure IG Batyrev, A Alavi, MW Finnis
Physical Review B 62 (7), 4698, 2000
208 2000 Ab initio calculations on the Al 2 O 3 (0001) surface I Batyrev, A Alavi, MW Finnis
Faraday Discussions 114, 33-43, 1999
168 1999 Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN SH Wei, X Nie, IG Batyrev, SB Zhang
Physical Review B 67 (16), 165209, 2003
137 2003 Borderline Magic Clustering: The Fabrication of Tetravalent Pb Cluster Arrays on Surfaces SC Li, JF Jia, RF Dou, QK Xue, IG Batyrev, SB Zhang
Physical review letters 93 (11), 116103, 2004
118 2004 Tip size effect on the appearance of a STM image for complex surfaces: Theory versus experiment for YL Wang, HJ Gao, HM Guo, HW Liu, IG Batyrev, WE McMahon, SB Zhang
Physical Review B 70 (7), 073312, 2004
84 2004 In-plane relaxation of Cu(111) and (0001) interfaces IG Batyrev, L Kleinman
Physical Review B 64 (3), 033410, 2001
80 2001 Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
73 2006 Effects of device aging on microelectronics radiation response and reliability DM Fleetwood, MP Rodgers, L Tsetseris, XJ Zhou, I Batyrev, S Wang, ...
Microelectronics Reliability 47 (7), 1075-1085, 2007
62 2007 Reactions of water molecules in silica-based network glasses IG Batyrev, B Tuttle, DM Fleetwood, RD Schrimpf, L Tsetseris, ...
Physical review letters 100 (10), 105503, 2008
59 2008 Magnetism of the V (001) surface: Contradictory results from pseudopotential and linearized augmented plane-wave calculations IG Batyrev, JH Cho, L Kleinman
Physical Review B 63 (17), 172420, 2001
46 2001 Hydrogen effects in MOS devices L Tsetseris, DM Fleetwood, RD Schrimpf, XJ Zhou, IG Batyrev, ...
Microelectronic engineering 84 (9-10), 2344-2349, 2007
42 2007 Hydrogen shuttling near Hf-defect complexes in Si∕ SiO2∕ HfO2 structures AG Marinopoulos, I Batyrev, XJ Zhou, RD Schrimpf, DM Fleetwood, ...
Applied Physics Letters 91 (23), 2007
36 2007 The effects of aging on MOS irradiation and annealing response MP Rodgers, DM Fleetwood, RD Schrimpf, IG Batyrev, S Wang, ...
IEEE transactions on nuclear science 52 (6), 2642-2648, 2005
35 2005 Performance, reliability, radiation effects, and aging issues in microelectronics–From atomic-scale physics to engineering-level modeling ST Pantelides, L Tsetseris, MJ Beck, SN Rashkeev, G Hadjisavvas, ...
Solid-State Electronics 54 (9), 841-848, 2010
34 2010 Effects of water on the aging and radiation response of MOS devices IG Batyrev, MP Rodgers, DM Fleetwood, RD Schrimpf, ST Pantelides
IEEE transactions on nuclear science 53 (6), 3629-3635, 2006
34 2006 Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling IG Batyrev, D Hughart, R Durand, M Bounasser, BR Tuttle, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 55 (6), 3039-3045, 2008
26 2008 5-7-5 line defects on : A general stress-relief mechanism for V/IV surfaces WE McMahon, IG Batyrev, T Hannappel, JM Olson, SB Zhang
Physical Review B 74 (3), 033304, 2006
26 2006 Stabilization of pentazolate anions in the high-pressure compounds Na 2 N 5 and NaN 5 and in the sodium pentazolate framework NaN 5· N 2 M Bykov, E Bykova, S Chariton, VB Prakapenka, IG Batyrev, ...
Dalton Transactions 50 (21), 7229-7237, 2021
21 2021 Density functional theory and evolution algorithm calculations of elastic properties of AlON IG Batyrev, DE Taylor, GA Gazonas, JW McCauley
Journal of Applied Physics 115 (2), 2014
21 2014 The structure of dislocations in (In, Al, Ga) N wurtzite films grown epitaxially on (0001) or (112¯ 2) GaN or AlN substrates KA Jones, IG Batyrev
Journal of Applied Physics 112 (11), 2012
21 2012