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Konstanze Hild
Konstanze Hild
Verified email at glasgow.ac.uk
Title
Cited by
Cited by
Year
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney
Journal of Applied Physics 111 (11), 2012
2202012
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser
P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ...
Applied Physics Letters 102 (24), 2013
1772013
Phonon interaction of single excitons and biexcitons
F Gindele, K Hild, W Langbein, U Woggon
Physical Review B 60 (4), R2157, 1999
1101999
Impact of alloy disorder on the band structure of compressively strained GaBi x As 1− x
M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ...
Physical Review B 87 (11), 115104, 2013
912013
Recombination mechanisms and band alignment of GaAs-1-xBix/GaAs light emitting diodes
DABTT N Hossain, IP Marko, SR Jin, K Hild, SJ. Sweeney, RB Lewis
Appl Phys Lett 100 (5), 2012
752012
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
IP Marko, P Ludewig, ZL Bushell, SR Jin, K Hild, Z Batool, S Reinhard, ...
Journal of Physics D: Applied Physics 47 (34), 345103, 2014
742014
Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
IP Marko, Z Batool, K Hild, SR Jin, N Hossain, TJC Hosea, JP Petropoulos, ...
Applied Physics Letters 101 (22), 2012
632012
Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs)
AB Ikyo, IP Marko, K Hild, AR Adams, S Arafin, MC Amann, SJ Sweeney
Scientific reports 6 (1), 1-6, 2016
542016
The potential role of bismide alloys in future photonic devices
SJ Sweeney, Z Batool, K Hild, SR Jin, TJC Hosea
2011 13th International Conference on Transparent Optical Networks, 1-4, 2011
442011
Huge binding energy of localized biexcitons in CdS/ZnS quantum structures
U Woggon, K Hild, F Gindele, W Langbein, M Hetterich, M Grün, ...
Physical Review B 61 (19), 12632, 2000
442000
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, ...
Semiconductor Science and Technology 30 (9), 094008, 2015
432015
Temperature-dependent line widths of single excitons and biexcitons
F Gindele, K Hild, W Langbein, U Woggon
Journal of luminescence 87, 381-383, 2000
372000
Relationship between human pupillary light reflex and circadian system status
MA Bonmati-Carrion, K Hild, C Isherwood, SJ Sweeney, VL Revell, ...
PLoS One 11 (9), e0162476, 2016
352016
Growth and characterisation of Ga (NAsBi) alloy by metal–organic vapour phase epitaxy
ZL Bushell, P Ludewig, N Knaub, Z Batool, K Hild, W Stolz, SJ Sweeney, ...
Journal of crystal growth 396, 79-84, 2014
342014
GaAs 1− x Bi x/GaN y As 1− y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near-and mid-infrared photonics
CA Broderick, S Jin, IP Marko, K Hild, P Ludewig, ZL Bushell, W Stolz, ...
Scientific reports 7 (1), 1-9, 2017
322017
Carrier recombination in quantum well lasers
K Hild, SJ Sweeney, S Wright, DA Lock, SR Jin, IP Marko, SR Johnson, ...
Applied Physics Letters 89 (17), 173509, 2006
302006
Effect of single and combined monochromatic light on the human pupillary light response
MA Bonmati-Carrion, K Hild, VL Revell, JA Madrid, MA Rol, DJ Skene
Frontiers in neurology 9, 418531, 2018
192018
MOVPE growth and characterization of quaternary Ga (PAsBi)/GaAs alloys for optoelectronic applications
L Nattermann, P Ludewig, N Knaub, NW Rosemann, T Hepp, E Sterzer, ...
Applied materials today 5, 209-214, 2016
182016
Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements
G Blume, K Hild, IP Marko, TJC Hosea, SQ Yu, SA Chaparro, N Samal, ...
Journal of Applied Physics 112 (3), 2012
132012
Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers
K Hild, IP Marko, SR Johnson, SQ Yu, YH Zhang, SJ Sweeney
Applied Physics Letters 99 (7), 2011
132011
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