Tibor Grasser
Tibor Grasser
Professor at TU Wien, Head of Institute for Microelectronics, Fellow IEEE
Email verificata su iue.tuwien.ac.at - Home page
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The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
4272011
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
T Grasser
Microelectronics Reliability 52 (1), 39-70, 2012
4232012
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
3232010
A review of hydrodynamic and energy-transport models for semiconductor device simulation
T Grasser, TW Tang, H Kosina, S Selberherr
Proceedings of the IEEE 91 (2), 251-274, 2003
3152003
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gs, B Kaczer
2010 IEEE International Reliability Physics Symposium, 16-25, 2010
3112010
A two-stage model for negative bias temperature instability
T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel
2009 IEEE international reliability physics symposium, 33-44, 2009
2532009
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
2442008
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress
H Reisinger, T Grasser, W Gustin, C Schlnder
2010 IEEE International Reliability Physics Symposium, 7-15, 2010
2412010
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
1832011
The universality of NBTI relaxation and its implications for modeling and characterization
T Grasser, W Gos, V Sverdlov, B Kaczer
2007 IEEE International Reliability Physics Symposium Proceedings. 45th…, 2007
1822007
Atomistic approach to variability of bias-temperature instability in circuit simulations
B Kaczer, S Mahato, VV de Almeida Camargo, M Toledano-Luque, ...
2011 International Reliability Physics Symposium, XT. 3.1-XT. 3.5, 2011
1592011
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
T Grasser, H Reisinger, PJ Wagner, B Kaczer
Physical Review B 82 (24), 245318, 2010
1522010
Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
T Grasser, B Kaczer, P Hehenberger, W Gos, R O'connor, H Reisinger, ...
2007 IEEE International Electron Devices Meeting, 801-804, 2007
1382007
Defects in microelectronic materials and devices
DM Fleetwood, RD Schrimpf
CRC press, 2008
1322008
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1312009
Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices—Application to NBTI
B Kaczer, PJ Roussel, T Grasser, G Groeseneken
IEEE Electron Device Letters 31 (5), 411-413, 2010
1302010
NBTI from the perspective of defect states with widely distributed time scales
B Kaczer, T Grasser, J Martin-Martinez, E Simoen, M Aoulaiche, ...
2009 IEEE International Reliability Physics Symposium, 55-60, 2009
1202009
Bias temperature instability for devices and circuits
T Grasser
Springer Science & Business Media, 2013
1182013
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, T Grasser, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 152-153, 2011
1172011
Recent advances in understanding the bias temperature instability
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010
1172010
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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