Inaccurate switching loss measurement of SiC MOSFET caused by probes: Modelization, characterization, and validation Z Zeng, J Wang, L Wang, Y Yu, K Ou
IEEE Transactions on Instrumentation and Measurement 70, 1-14, 2020
30 2020 A robust hardened latch featuring tolerance to double-node-upset in 28nm CMOS for spaceborne application Y Li, X Cheng, C Tan, J Han, Y Zhao, L Wang, T Li, MB Tahoori, X Zeng
IEEE Transactions on Circuits and Systems II: Express Briefs 67 (9), 1619-1623, 2020
27 2020 Effects of total-ionizing-dose irradiation on SEU-and SET-induced soft errors in bulk 40-nm sequential circuits RM Chen, ZJ Diggins, NN Mahatme, L Wang, EX Zhang, YP Chen, YN Liu, ...
IEEE Transactions on Nuclear Science 64 (1), 471-476, 2016
25 2016 SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD Y Zhao, L Wang, S Yue, D Wang, X Zhao, Y Sun, D Li, F Wang, X Yang, ...
IEEE Transactions on Nuclear Science 62 (6), 2666-2672, 2015
24 2015 The increased single-event upset sensitivity of 65-nm DICE SRAM induced by total ionizing dose Q Zheng, J Cui, W Lu, H Guo, J Liu, X Yu, Y Wei, L Wang, J Liu, C He, ...
IEEE Transactions on Nuclear Science 65 (8), 1920-1927, 2018
23 2018 Low-Overhead SEU-Tolerant Latches L Wang, S Yue, Y Zhao
Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International …, 2007
18 2007 Numerical and experimental investigation of TID radiation effects on the breakdown voltage of 400-V SOI NLDMOSFETs L Shu, L Wang, X Zhou, CL Sui, Y Li, B Wang, YF Zhao, KF Galloway
IEEE Transactions on Nuclear Science 66 (4), 710-715, 2019
17 2019 Effects of temperature and supply voltage on SEU-and SET-induced errors in bulk 40-nm sequential circuits RM Chen, ZJ Diggins, NN Mahatme, L Wang, EX Zhang, YP Chen, ...
IEEE Transactions on Nuclear Science 64 (8), 2122-2128, 2017
17 2017 Single event soft error in advanced integrated circuit Y Zhao, S Yue, X Zhao, S Lu, Q Bian, L Wang, Y Sun
Journal of Semiconductors 36 (11), 111001, 2015
17 2015 Comparison of sensitive volumes associated with ion-and laser-induced charge collection in an epitaxial silicon diode KL Ryder, LD Ryder, AL Sternberg, JA Kozub, EX Zhang, A Khachatrian, ...
IEEE Transactions on Nuclear Science 67 (1), 57-62, 2019
13 2019 An SEU-Tolerant Programmable Frequency Divider L Wang, S Yue, Y Zhao, L Fan
Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on, 2007
13 2007 Effect of drift length on shifts in 400-V SOI LDMOS breakdown voltage due to TID L Shu, YF Zhao, KF Galloway, L Wang, XS Wang, X Zhou, WP Chen, ...
IEEE Transactions on Nuclear Science 67 (11), 2392-2395, 2020
12 2020 TID-induced off-state leakage current in partially radiation-hardened SOI LDMOS L Shu, L Wang, K Zhao, X Zhou, YF Zhao, KF Galloway, CL Sui, CM Liu, ...
IEEE Transactions on Nuclear Science 67 (6), 1133-1138, 2020
12 2020 Radiation hardened 12T SRAM with crossbar-based peripheral circuit in 28nm CMOS technology Y Han, T Li, X Cheng, L Wang, J Han, Y Zhao, X Zeng
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (7), 2962-2975, 2021
11 2021 Comparison of single-event transients in an epitaxial silicon diode resulting from heavy-ion-, focused X-ray-, and pulsed laser-induced charge generation KL Ryder, LD Ryder, AL Sternberg, JA Kozub, EX Zhang, ...
IEEE Transactions on Nuclear Science 68 (5), 626-633, 2021
11 2021 Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Alx Ga1-x N Channel S Liu, J Zhang, S Zhao, L Shu, X Song, X Qin, Y Wu, W Zhang, T Li, ...
IEEE Transactions on Electron Devices 69 (3), 973-980, 2022
10 2022 Total ionizing dose influence on the single-event multiple-cell upsets in 65-nm 6-T SRAM Q Zheng, J Cui, W Lu, H Guo, J Liu, X Yu, L Wang, J Liu, C He, D Ren, ...
IEEE Transactions on Nuclear Science 66 (6), 892-898, 2018
10 2018 Impact of temporal masking of flip-flop upsets on soft error rates of sequential circuits RM Chen, NN Mahatme, ZJ Diggins, L Wang, EX Zhang, YP Chen, YN Liu, ...
IEEE Transactions on Nuclear Science 64 (8), 2098-2106, 2017
10 2017 Total Ionizing Dose Effects on Ge Channel FETs with Raised Source/Drain L Wang, EX Zhang, RD Schrimpf, DM Fleetwood, GX Duan, JA Hachtel, ...
IEEE Transactions on Nuclear Science 62 (6), 2412-2416, 2015
10 2015 Modeling irradiation-induced degradation for 4H-sic power mosfets S Liang, Y Yang, L Shu, Z Wu, B Chen, H Yu, H Liu, L Wang, T Li, G Deng, ...
IEEE Transactions on Electron Devices 70 (3), 1176-1180, 2023
8 2023