Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean
Philosophical Magazine A 59 (5), 1059-1073, 1989
197 1989 Variation of dislocation morphology with strain in GexSi1− x epilayers on (100) Si EP Kvam, DM Maher, CJ Humphreys
Journal of Materials Research 5 (9), 1900-1907, 1990
131 1990 Surface orientation and stacking fault generation in strained epitaxial growth EP Kvam, R Hull
Journal of applied physics 73 (11), 7407-7411, 1993
64 1993 Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions C Varanasi, PJ McGinn, V Pavate, EP Kvam
Physica C: Superconductivity 221 (1-2), 46-52, 1994
59 1994 Development of epitaxial Alx Sc1−x N for artificially structured metal/semiconductor superlattice metamaterials B Saha, S Saber, GV Naik, A Boltasseva, EA Stach, EP Kvam, TD Sands
physica status solidi (b) 252 (2), 251-259, 2015
57 2015 X‐ray topography of the coherency breakdown in Gex Si1−x /Si(100) DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, GS Green, ...
Applied physics letters 53 (21), 2083-2085, 1988
54 1988 New Source of Dislocations in Strained Epitaxial Layers DJ Eaglesham, DM Maher, EP Kvam, JC Bean, CJ Humphreys
Physical review letters 62 (2), 187, 1989
50 1989 The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers EP Kvam, DJ Eaglesham, DM Maher, CJ Humphreys, JC Bean, GS Green, ...
MRS Online Proceedings Library (OPL) 104, 623, 1987
42 1987 Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy MA Capano, BC Kim, AR Smith, EP Kvam, S Tsoi, AK Ramdas
Journal of applied physics 100 (8), 2006
38 2006 Synthesis and optimization of a new starch-based adsorbent for dehumidification of air in a pressure-swing dryer LE Anderson, M Gulati, PJ Westgate, EP Kvam, K Bowman, MR Ladisch
Industrial & engineering chemistry research 35 (4), 1180-1187, 1996
33 1996 Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon H Wong, J Lou, NW Cheung, EP Kvam, KM Yu, DA Olson, J Washburn
Applied physics letters 57 (8), 798-800, 1990
33 1990 Observations of hierarchical grain-boundary dislocation structures in [001] symmetric tilt boundaries in gold EP Kvam, RW Balluffi
Philosophical Magazine A 56 (1), 137-148, 1987
32 1987 Effect of enzyme modification of corn grits on their properties as an adsorbent in a skarstrom pressure swing cycle dryer KE Beery, M Gulati, EP Kvam, MR Ladisch
Adsorption 4, 321-335, 1998
25 1998 Effects of processing parameters on the levitation force of melt-processed YBa2Cu3Ox C Varanasi, PJ McGinn, V Pavate, EP Kvam
Journal of materials research 10 (9), 2251-2256, 1995
25 1995 Crystalline linkage and defect structures in bulk zone melt textured YBa2 Cu3 O7 observed by transmission electron microscopy A Zanota, EP Kvam, D Balkin, PJ McGinn
Applied physics letters 62 (21), 2722-2724, 1993
25 1993 Deformation induced defects in ReBa2Cu3O7− δ MJ Kramer, LS Chumbley, RW McCallum, WJ Nellis, S Weir, EP Kvam
Physica C: Superconductivity 166 (1-2), 115-124, 1990
25 1990 Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface V Gopal, EP Kvam, TP Chin, JM Woodall
Applied physics letters 72 (18), 2319-2321, 1998
24 1998 Possible dislocation multiplication source in (001) semiconductor epitaxy J Washburn, EP Kvam
Applied physics letters 57 (16), 1637-1639, 1990
23 1990 Interactions of dislocations and antiphase (inversion) domain boundaries in III–V/IV heteroepitaxy EP Kvam
Journal of electronic materials 23, 1021-1026, 1994
22 1994 The origin of dislocations in multilayers CJ Humphreys, DM Maher, DJ Eaglesham, EP Kvam, IG Salisbury
Journal de Physique III 1 (6), 1119-1130, 1991
22 1991