10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
901 2011 High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
297 2009 Endurance/Retention Trade-off on Cap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
281 2013 Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ...
Applied Physics Letters 104 (9), 2014
219 2014 Improvement of data retention in HfO2 /Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
140 2013 Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
119 2012 International Electron Devices Meeting B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Washington DC 31 (1), 2011
118 2011 Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
116 2015 Understanding of the endurance failure in scaled HfO2 -based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
110 2012 Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ...
2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013
104 2013 Heterospin Systems Constructed from [Cu2 Ln]3+ and [Ni(mnt)2 ]1 - ,2 - Tectons: First 3p−3d−4f Complexes (mnt = Maleonitriledithiolato) AM Madalan, N Avarvari, M Fourmigué, R Clérac, LF Chibotaru, S Clima, ...
Inorganic chemistry 47 (3), 940-950, 2008
104 2008 First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ...
Applied Physics Letters 100 (13), 2012
99 2012 Ultralow sub-500nA operating current high-performance TiN\Al2 O3 \HfO2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
90 2012 Intrinsic program instability in HfO2 RRAM and consequences on program algorithms A Fantini, G Gorine, R Degraeve, L Goux, CY Chen, A Redolfi, S Clima, ...
2015 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2015
86 2015 Composition influence on the physical and electrical properties of SrxTi1− xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom … N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, ...
Journal of Applied Physics 106 (9), 2009
73 2009 Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations L Zhao, S Clima, B Magyari-Köpe, M Jurczak, Y Nishi
Applied Physics Letters 107 (1), 2015
67 2015 Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance B Govoreanu, GL Donadio, K Opsomer, W Devulder, VV Afanas' ev, ...
2017 Symposium on VLSI Technology, T92-T93, 2017
65 2017 Embedding fragment ab initio model potentials in CASSCF/CASPT2 calculations of doped solids: implementation and applications B Swerts, LF Chibotaru, R Lindh, L Seijo, Z Barandiaran, S Clima, ...
Journal of Chemical Theory and Computation 4 (4), 586-594, 2008
63 2008 Field-driven ultrafast sub-ns programming in W\Al2 O3 \Ti\CuTe-based 1T1R CBRAM system L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ...
2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012
62 2012 10× 10 nm 2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. in 2011 Int B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Electron Devices Meet 31, 1-31.6, 2011
60 2011