| Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Y Wan, D Inoue, D Jung, JC Norman, C Shang, AC Gossard, JE Bowers Photonics Research 6 (8), 776-781, 2018 | 71 | 2018 |
| Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Y Wan, D Inoue, D Jung, JC Norman, C Shang, AC Gossard, JE Bowers Photonics Research 6 (8), 776-781, 2018 | 71 | 2018 |
| Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon D Inoue, D Jung, J Norman, Y Wan, N Nishiyama, S Arai, AC Gossard, ... Optics Express 26 (6), 7022-7033, 2018 | 62 | 2018 |
| Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate D Inoue, J Lee, T Hiratani, Y Atsuji, T Amemiya, N Nishiyama, S Arai Optics express 23 (6), 7771-7778, 2015 | 47 | 2015 |
| Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate D Inoue, J Lee, K Doi, T Hiratani, Y Atsuji, T Amemiya, N Nishiyama, ... Applied Physics Express 7 (7), 072701, 2014 | 36 | 2014 |
| Room-temperature continuous-wave operation of membrane distributed-reflector laser T Hiratani, D Inoue, T Tomiyasu, Y Atsuji, K Fukuda, T Amemiya, ... Applied Physics Express 8 (11), 112701, 2015 | 32 | 2015 |
| Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot pin photodiode grown on on-axis (001) GaP/Si D Inoue, Y Wan, D Jung, J Norman, C Shang, N Nishiyama, S Arai, ... Applied Physics Letters 113 (9), 093506, 2018 | 31 | 2018 |
| Low-bias current 10 Gbit/s direct modulation of GaInAsP/InP membrane DFB laser on silicon D Inoue, T Hiratani, K Fukuda, T Tomiyasu, T Amemiya, N Nishiyama, ... Optics Express 24 (16), 18571-18579, 2016 | 31 | 2016 |
| High-modulation efficiency operation of GaInAsP/InP membrane distributed feedback laser on Si substrate D Inoue, T Hiratani, K Fukuda, T Tomiyasu, T Amemiya, N Nishiyama, ... Optics express 23 (22), 29024-29031, 2015 | 28 | 2015 |
| Monolithic integration of membrane-based butt-jointed built-in DFB lasers and pin photodiodes bonded on Si substrate D Inoue, T Hiratani, Y Atsuji, T Tomiyasu, T Amemiya, N Nishiyama, S Arai IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 392-398, 2015 | 22 | 2015 |
| 20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit T Tomiyasu, D Inoue, T Hiratani, K Fukuda, N Nakamura, T Uryu, ... Applied Physics Express 11 (1), 012704, 2017 | 20 | 2017 |
| High-power CW oscillation of 1.3-µm wavelength InP-based photonic-crystal surface-emitting lasers Y Itoh, N Kono, D Inoue, N Fujiwara, M Ogasawara, K Fujii, H Yoshinaga, ... Optics Express 30 (16), 29539-29545, 2022 | 19 | 2022 |
| Energy Cost Analysis of Membrane Distributed-Reflector Lasers for On-Chip Optical Interconnects T Hiratani, T Shindo, K Doi, Y Atsuji, D Inoue, T Amemiya, N Nishiyama, ... IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 299-308, 2015 | 19 | 2015 |
| 20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate Z Gu, D Inoue, T Amemiya, N Nishiyama, S Arai Applied Physics Express 11 (2), 022102, 2018 | 17 | 2018 |
| High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate T Hiratani, D Inoue, T Tomiyasu, K Fukuda, T Amemiya, N Nishiyama, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-8, 2017 | 17 | 2017 |
| High-differential quantum efficiency operation of GaInAsP/InP membrane distributed-reflector laser on Si T Tomiyasu, T Hiratani, D Inoue, N Nakamura, K Fukuda, T Uryu, ... Applied Physics Express 10 (6), 062702, 2017 | 17 | 2017 |
| Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and pin Photodiode D Inoue, T Hiratani, K Fukuda, T Tomiyasu, Z Gu, T Amemiya, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-8, 2017 | 15 | 2017 |
| High efficiency operation of GaInAsP/InP membrane distributed-reflector laser on Si T Hiratani, D Inoue, T Tomiyasu, K Fukuda, N Nakamura, T Amemiya, ... IEEE Photonics Technology Letters 29 (21), 1832-1835, 2017 | 11 | 2017 |
| On-chip membrane-based GaInAs/InP waveguide-type pin photodiode fabricated on silicon substrate Z Gu, T Uryu, N Nakamura, D Inoue, T Amemiya, N Nishiyama, S Arai Applied Optics 56 (28), 7841-7848, 2017 | 10 | 2017 |
| Organic membrane photonic integrated circuits (OMPICs) T Amemiya, T Kanazawa, T Hiratani, D Inoue, Z Gu, S Yamasaki, ... Optics Express 25 (16), 18537-18552, 2017 | 10 | 2017 |
Shigehisa AraiQuantum Nanoelectronics Research Center, Tokyo Institute of TechnologyEmail verificata su pe.titech.ac.jp
