SiGe intermixing in Ge/Si (100) islands G Capellini, M De Seta, F Evangelisti
Applied Physics Letters 78 (3), 303-305, 2001
209 2001 Strain relaxation in high Ge content SiGe layers deposited on Si G Capellini, M De Seta, Y Busby, M Pea, F Evangelisti, G Nicotra, ...
Journal of Applied Physics 107 (6), 2010
91 2010 Ordering self-assembled islands without substrate patterning G Capellini, M De Seta, C Spinella, F Evangelisti
Applied physics letters 82 (11), 1772-1774, 2003
78 2003 High temperature x ray diffraction measurements on Ge/Si (001) heterostructures: A study on the residual tensile strain G Capellini, M De Seta, P Zaumseil, G Kozlowski, T Schroeder
Journal of Applied Physics 111 (7), 2012
76 2012 Intermixing-promoted scaling of Ge/Si (100) island sizes M De Seta, G Capellini, F Evangelisti, C Spinella
Journal of applied physics 92 (1), 614-619, 2002
67 2002 Investigating the CVD synthesis of graphene on Ge (100): toward layer-by-layer growth AM Scaparro, V Miseikis, C Coletti, A Notargiacomo, M Pea, M De Seta, ...
ACS applied materials & interfaces 8 (48), 33083-33090, 2016
63 2016 Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions T Grange, D Stark, G Scalari, J Faist, L Persichetti, L Di Gaspare, ...
Applied Physics Letters 114 (11), 2019
60 2019 Direct evidence of C 60 chemical bonding on Si (100) M De Seta, D Sanvitto, F Evangelisti
Physical Review B 59 (15), 9878, 1999
56 1999 Near-and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells Y Busby, M De Seta, G Capellini, F Evangelisti, M Ortolani, M Virgilio, ...
Physical Review B 82 (20), 205317, 2010
50 2010 Ge–Si intermixing in Ge quantum dots on Si F Boscherini, G Capellini, L Di Gaspare, M De Seta, F Rosei, A Sgarlata, ...
Thin Solid Films 380 (1-2), 173-175, 2000
50 2000 Self-ordering of a Ge island single layer induced by Si overgrowth G Capellini, M De Seta, F Evangelisti, VA Zinovyev, G Vastola, ...
Physical review letters 96 (10), 106102, 2006
48 2006 SiC formation on Si (100) via C60 precursors M De Seta, N Tomozeiu, D Sanvitto, F Evangelisti
Surface science 460 (1-3), 203-213, 2000
44 2000 Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si–Ge nanostructures R Marchetti, F Montalenti, L Miglio, G Capellini, M De Seta, F Evangelisti
Applied Physics Letters 87 (26), 2005
43 2005 Ge/Si (100) islands: Growth dynamics versus growth rate G Capellini, M De Seta, F Evangelisti
Journal of applied physics 93 (1), 291-295, 2003
42 2003 Early stage of CVD graphene synthesis on Ge (001) substrate L Di Gaspare, AM Scaparro, M Fanfoni, L Fazi, A Sgarlata, ...
Carbon 134, 183-188, 2018
37 2018 Conduction band intersubband transitions in Ge/SiGe quantum wells M De Seta, G Capellini, Y Busby, F Evangelisti, M Ortolani, M Virgilio, ...
Applied Physics Letters 95 (5), 2009
37 2009 Electronic states at the Fermi level of doped M De Seta, F Evangelisti
Physical review letters 71 (15), 2477, 1993
37 1993 Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial roughness scattering T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ...
Physical Review Applied 13 (4), 044062, 2020
35 2020 Control of Electron-State Coupling in Asymmetric Quantum Wells C Ciano, M Virgilio, M Montanari, L Persichetti, L Di Gaspare, M Ortolani, ...
Physical Review Applied 11 (1), 014003, 2019
34 2019 Long intersubband relaxation times in n-type germanium quantum wells M Ortolani, D Stehr, M Wagner, M Helm, G Pizzi, M Virgilio, G Grosso, ...
Applied Physics Letters 99 (20), 2011
34 2011