Felice Crupi
Felice Crupi
Verified email at unical.it
Cited by
Cited by
A 2.6 nW, 0.45 V temperature-compensated subthreshold CMOS voltage reference
L Magnelli, F Crupi, P Corsonello, C Pace, G Iannaccone
IEEE Journal of Solid-State Circuits 46 (2), 465-474, 2010
On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
F Crupi, R Degraeve, G Groeseneken, T Nigam, HE Maes
IEEE Transactions on Electron Devices 45 (11), 2329-2334, 1998
Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks
P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
Impact strain engineering on gate stack quality and reliability
C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness
S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi
Journal of applied physics 86 (11), 6382-6391, 1999
Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/bulk trap density in a SiO/sub 2//HfO/sub 2/stack
F Crupi, R Degraeve, A Kerber, DH Kwak, G Groeseneken
2004 IEEE International Reliability Physics Symposium. Proceedings, 181-187, 2004
Design of a 75‐nW, 0.5‐V subthreshold complementary metal–oxide–semiconductor operational amplifier
L Magnelli, FA Amoroso, F Crupi, G Cappuccino, G Iannaccone
International Journal of Circuit Theory and Applications 42 (9), 967-977, 2014
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics
G Giusi, F Crupi, C Pace, C Ciofi, G Groeseneken
IEEE transactions on electron devices 53 (4), 823-828, 2006
Electrical and thermal transient during dielectric breakdown of thin oxides in metal--silicon capacitors
S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ...
Journal of applied physics 84 (1), 472-479, 1998
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells
S Strangio, P Palestri, D Esseni, L Selmi, F Crupi, S Richter, QT Zhao, ...
IEEE Journal of the Electron Devices Society 3 (3), 223-232, 2015
Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 052904, 2010
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks
F Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C Claeys
IEEE Electron Device Letters 27 (8), 688-691, 2006
An ultralow-voltage energy-efficient level shifter
M Lanuzza, F Crupi, S Rao, R De Rose, S Strangio, G Iannaccone
IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 61-65, 2016
Mixed tunnel-FET/MOSFET level shifters: A new proposal to extend the tunnel-FET application domain
M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni
IEEE Transactions on Electron Devices 62 (12), 3973-3979, 2015
Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies
P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...
IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011
A Sub-Voltage Reference Operating at 150 mV
D Albano, F Crupi, F Cucchi, G Iannaccone
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 23 (8á…, 2014
On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in GeJunctions
E Simoen, F De Stefano, G Eneman, B De Jaeger, C Claeys, F Crupi
IEEE electron device letters 30 (5), 562-564, 2009
Reliability comparison of triple-gate versus planar SOI FETs
F Crupi, B Kaczer, R Degraeve, V Subramanian, P Srinivasan, E Simoen, ...
IEEE Transactions on electron devices 53 (9), 2351-2357, 2006
Modelling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters
A Campera, G Iannaccone, F Crupi
arXiv preprint cond-mat/0609403, 2006
Positive bias temperature instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics
F Crupi, C Pace, G Cocorullo, G Groeseneken, M Aoulaiche, M Houssa
Microelectronic engineering 80, 130-133, 2005
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