Michael Clavel
Citata da
Citata da
Integration of lead-free ferroelectric on HfO 2/Si (100) for high performance non-volatile memory applications
S Kundu, D Maurya, M Clavel, Y Zhou, NN Halder, MK Hudait, P Banerji, ...
Scientific reports 5 (1), 1-10, 2015
Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down-and up-conversions
N Shehata, K Meehan, I Hassounah, M Hudait, N Jain, M Clavel, S Elhelw, ...
Nanoscale research letters 9 (1), 1-6, 2014
Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO 3 for low-power non-volatile memory and efficient ultraviolet ray detection
S Kundu, M Clavel, P Biswas, B Chen, HC Song, P Kumar, NN Halder, ...
Scientific reports 5 (1), 1-14, 2015
Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors
MK Hudait, M Clavel, P Goley, N Jain, Y Zhu
Scientific Reports 4, 6964, 2014
Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors
M Clavel, P Goley, N Jain, Y Zhu, MK Hudait
IEEE Journal of the Electron Devices Society, 2015
An energy-efficient tensile-strained Ge/InGaAs TFET 7T SRAM cell architecture for ultralow-voltage applications
JS Liu, MB Clavel, MK Hudait
IEEE Transactions on Electron Devices 64 (5), 2193-2200, 2017
Enhanced erbium-doped ceria nanostructure coating to improve solar cell performance
N Shehata, M Clavel, K Meehan, E Samir, S Gaballah, M Salah
Materials 8 (11), 7663-7672, 2015
Integration of SrTiO3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications
MK Hudait, M Clavel, Y Zhu, PS Goley, S Kundu, D Maurya, S Priya
ACS applied materials & interfaces 7 (9), 5471-5479, 2015
Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs1–ySby with Tunable Antimony Composition
JS Liu, M Clavel, MK Hudait
ACS applied materials & interfaces 7 (51), 28624-28631, 2015
Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy
A Ghosh, MB Clavel, PD Nguyen, MA Meeker, GA Khodaparast, ...
Aip Advances 7 (9), 095214, 2017
Heterogeneously-grown tunable tensile strained germanium on silicon for photonic devices
M Clavel, D Saladukha, PS Goley, TJ Ochalski, F Murphy-Armando, ...
ACS applied materials & interfaces 7 (48), 26470-26481, 2015
Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer
P Nguyen, M Clavel, P Goley, J Liu, N Allen, L Guido, M Hudait
IEEE Journal of the Electron Devices Society 3 (4), 341-348, 2015
Performance evaluation of novel strain-engineered Ge-InGaAs heterojunction tunnel field-effect transistors
JS Liu, MB Clavel, MK Hudait
IEEE Transactions on Electron Devices 62 (10), 3223-3228, 2015
Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy
JS Liu, MB Clavel, R Pandey, S Datta, M Meeker, GA Khodaparast, ...
Journal of Applied Physics 119 (24), 244308, 2016
Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies
D Saladukha, MB Clavel, F Murphy-Armando, G Greene-Diniz, M Grning, ...
Physical Review B 97 (19), 195304, 2018
Magnetic field sensing by exploiting giant nonstrain-mediated magnetodielectric response in epitaxial composites
MG Kang, HB Kang, M Clavel, D Maurya, S Gollapudi, M Hudait, ...
Nano letters 18 (5), 2835-2843, 2018
Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials
Y Zhu, M Clavel, P Goley, MK Hudait
Journal of Applied Physics 116 (13), 134304, 2014
The permittivity and refractive index measurements of doped barium titanate (BT-BCN)
MA Meeker, S Kundu, D Maurya, MG Kang, A Sosa, ...
Optical Materials 73, 793-798, 2017
Magnetotransport properties of epitaxial Ge/AlAs heterostructures integrated on GaAs and silicon
MK Hudait, M Clavel, PS Goley, Y Xie, JJ Heremans
ACS applied materials & interfaces 7 (40), 22315-22321, 2015
Mixed-anion GaAs1− ySby graded buffer heterogeneously integrated on Si by molecular beam epitaxy
MK Hudait, Y Zhu, P Goley, M Clavel, N Jain
Applied Physics Express 8 (2), 025501, 2015
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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