Segui
Jiarui Gong
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Anno
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ...
Applied physics letters 113 (1), 2018
832018
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection
D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ...
Applied Physics Letters 112 (8), 2018
712018
Lattice-mismatched semiconductor heterostructures
D Liu, SJ Cho, JH Seo, K Kim, M Kim, J Shi, X Yin, W Choi, C Zhang, ...
arXiv preprint arXiv:1812.10225, 2018
272018
Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs
SJ Cho, D Liu, A Hardy, J Kim, J Gong, CJ Herrera-Rodriguez, E Swinnich, ...
AIP Advances 10 (12), 2020
252020
Reduction of leakage current in GaN Schottky diodes through ultraviolet/ozone plasma treatment
K Kim, D Liu, J Gong, Z Ma
IEEE Electron Device Letters 40 (11), 1796-1799, 2019
212019
P-type silicon as hole supplier for nitride-based UVC LEDs
SJ Cho, D Liu, JH Seo, R Dalmau, K Kim, J Park, J Gong, D Zhao, F Wang, ...
New Journal of Physics 21 (2), 023011, 2019
192019
AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface
K Kim, TJ Kim, H Zhang, D Liu, YH Jung, J Gong, Z Ma
IEEE Electron Device Letters 41 (10), 1488-1491, 2020
172020
Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
D Liu, SJ Cho, H Zhang, CR Carlos, ARK Kalapala, J Park, J Kim, ...
AIP Advances 9 (8), 2019
122019
Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements
J Gong, Z Zheng, D Vincent, J Zhou, J Kim, D Kim, TK Ng, BS Ooi, ...
Journal of Applied Physics 132 (13), 2022
102022
Metal-Al2O3-GaN capacitors with an ultraviolet/ozone plasma-treated interface
K Kim, J Kim, J Gong, D Liu, Z Ma
Japanese Journal of Applied Physics 59 (3), 030908, 2020
102020
Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN
J Gong, K Lu, J Kim, TK Ng, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma
Japanese Journal of Applied Physics 61 (1), 011003, 2021
92021
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
J Gong, J Zhou, P Wang, TH Kim, K Lu, S Min, R Singh, M Sheikhi, ...
Advanced Electronic Materials 9 (5), 2201309, 2023
62023
Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 npn double heterojunctions
J Zhou, A Dheenan, J Gong, C Adamo, P Marshall, M Sheikhi, TH Tsai, ...
arXiv preprint arXiv:2308.06575, 2023
32023
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
J Gong, D Kim, H Jang, F Alema, Q Wang, TK Ng, S Qiu, J Zhou, X Su, ...
arXiv preprint arXiv:2305.19138, 2023
32023
Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
S Qiu, J Gong, J Zhou, TK Ng, R Singh, M Sheikhi, BS Ooi, Z Ma
AIP Advances 13 (5), 2023
32023
Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors
J Gong, J Kim, TK Ng, K Lu, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma
arXiv, 2021
22021
Toward diamond-collector heterojunction bipolar transistors via grafted GaAs-diamond np junction
D Liu, SJ Cho, A Hardy, J Kim, CJ Herrera-Rodriguez, E Swinnich, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
22019
Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) pn heterojunction determined by X-ray photoelectron spectroscopy
J Gong, J Zhou, A Dheenan, M Sheikhi, F Alema, TK Ng, SS Pasayat, ...
Applied Surface Science, 159615, 2024
12024
0.86 kV p-Si/(001)-Ga2O3 heterojunction diode
S Xie, MT Alam, J Gong, Q Lin, M Sheikhi, J Zhou, F Alema, A Osinsky, ...
IEEE Electron Device Letters, 2024
12024
Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition
HN Abbasi, X Qi, J Gong, Z Ju, S Min, YH Zhang, Z Ma
Journal of Applied Physics 134 (13), 2023
12023
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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