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stephen edward saddow
stephen edward saddow
Department of Electrical Engineering, University of South Florida
Verified email at usf.edu - Homepage
Title
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Cited by
Year
Advances in silicon carbide processing and applications
SE Saddow, AK Agarwal
Artech House, 2004
5022004
Silicon carbide biotechnology: a biocompatible semiconductor for advanced biomedical devices and applications
SE Saddow
Elsevier, 2011
2372011
Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC
CM Tanner, YC Perng, C Frewin, SE Saddow, JP Chang
Applied Physics Letters 91 (20), 2007
2102007
Silicon carbide: a versatile material for biosensor applications
A Oliveros, A Guiseppi-Elie, SE Saddow
Biomedical microdevices 15, 353-368, 2013
2022013
4H–SiC photoconductive switching devices for use in high-power applications
S Doǧan, A Teke, D Huang, H Morkoç, CB Roberts, J Parish, B Ganguly, ...
Applied physics letters 82 (18), 3107-3109, 2003
1402003
Biocompatibility and wettability of crystalline SiC and Si surfaces
C Coletti, MJ Jaroszeski, A Pallaoro, AM Hoff, S Iannotta, SE Saddow
2007 29th Annual International Conference of the IEEE Engineering in …, 2007
1002007
Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates
M Mynbaeva, SE Saddow, G Melnychuk, I Nikitina, M Scheglov, ...
Applied Physics Letters 78 (1), 117-119, 2001
862001
High growth rates (> 30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor
RL Myers, Y Shishkin, O Kordina, SE Saddow
Journal of Crystal Growth 285 (4), 486-490, 2005
742005
Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors
KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson
Applied Physics Letters 78 (14), 2073-2075, 2001
702001
Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching
S Soubatch, SE Saddow, SP Rao, WY Lee, M Konuma, U Starke
Materials science forum 483, 761-764, 2005
682005
Single-crystal silicon carbide: A biocompatible and hemocompatible semiconductor for advanced biomedical applications
SE Saddow, CL Frewin, C Coletti, N Schettini, E Weeber, A Oliveros, ...
Materials Science Forum 679, 824-830, 2011
672011
Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates
R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ...
Journal of Applied Physics 105 (8), 2009
672009
A comprehensive study of hydrogen etching on the major SiC polytypes and crystal orientations
CL Frewin, C Coletti, C Riedl, U Starke, SE Saddow
Materials science forum 615, 589-592, 2009
612009
Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application
R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via
Journal of Microelectromechanical Systems 20 (3), 745-752, 2011
582011
Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates
CL Frewin, M Jaroszeski, E Weeber, KE Muffly, A Kumar, M Peters, ...
Journal of Molecular Recognition: An Interdisciplinary Journal 22 (5), 380-388, 2009
572009
Increased growth rate in a SiC CVD reactor using HCl as a growth additive
RL Myers-Ward, O Kordina, Z Shishkin, SP Rao, R Everly, SE Saddow
Materials Science Forum 483, 73-76, 2005
532005
Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins
A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via
Diamond and related materials 18 (12), 1440-1449, 2009
522009
Development of a high-growth rate 3C-SiC on Si CVD process
M Reyes, Y Shishkin, S Harvey, SE Saddow
MRS Online Proceedings Library (OPL) 911, 0911-B08-01, 2006
522006
Observation of the D‐center in 6H‐SiC pn diodes grown by chemical vapor deposition
MS Mazzola, SE Saddow, PG Neudeck, VK Lakdawala, S We
Applied physics letters 64 (20), 2730-2732, 1994
521994
Use of cortical neuronal networks for in vitro material biocompatibility testing
H Charkhkar, C Frewin, M Nezafati, GL Knaack, N Peixoto, SE Saddow, ...
Biosensors and Bioelectronics 53, 316-323, 2014
462014
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