stephen edward saddow
stephen edward saddow
Department of Electrical Engineering, University of South Florida
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Citata da
Citata da
Advances in silicon carbide processing and applications
SE Saddow, AK Agarwal
Artech House, 2004
Electrical performance of gate dielectric films deposited by atomic layer deposition on
CM Tanner, YC Perng, C Frewin, SE Saddow, JP Chang
Applied Physics Letters 91 (20), 203510, 2007
Silicon carbide: a versatile material for biosensor applications
A Oliveros, A Guiseppi-Elie, SE Saddow
Biomedical microdevices 15 (2), 353-368, 2013
4H–SiC photoconductive switching devices for use in high-power applications
S Doǧan, A Teke, D Huang, H Morkoç, CB Roberts, J Parish, B Ganguly, ...
Applied physics letters 82 (18), 3107-3109, 2003
Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates
M Mynbaeva, SE Saddow, G Melnychuk, I Nikitina, M Scheglov, ...
Applied Physics Letters 78 (1), 117-119, 2001
High growth rates (> 30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor
RL Myers, Y Shishkin, O Kordina, SE Saddow
Journal of Crystal Growth 285 (4), 486-490, 2005
Biocompatibility and wettability of crystalline SiC and Si surfaces
C Coletti, MJ Jaroszeski, A Pallaoro, AM Hoff, S Iannotta, SE Saddow
2007 29th Annual International Conference of the IEEE Engineering in …, 2007
Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors
KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson
Applied Physics Letters 78 (14), 2073-2075, 2001
Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates
CL Frewin, M Jaroszeski, E Weeber, KE Muffly, A Kumar, M Peters, ...
Journal of Molecular Recognition: An Interdisciplinary Journal 22 (5), 380-388, 2009
Heteroepitaxy of -SiC on different on-axis oriented silicon substrates
R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ...
Journal of Applied Physics 105 (8), 084910, 2009
Increased growth rate in a SiC CVD reactor using HCl as a growth additive
RL Myers-Ward, O Kordina, Z Shishkin, SP Rao, R Everly, SE Saddow
Materials Science Forum 483, 73-76, 2005
Single-crystal silicon carbide: A biocompatible and hemocompatible semiconductor for advanced biomedical applications
SE Saddow, CL Frewin, C Coletti, N Schettini, E Weeber, A Oliveros, ...
Materials Science Forum 679, 824-830, 2011
Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins
A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via
Diamond and related materials 18 (12), 1440-1449, 2009
Observation of the D‐center in 6H‐SiC pn diodes grown by chemical vapor deposition
MS Mazzola, SE Saddow, PG Neudeck, VK Lakdawala, S We
Applied physics letters 64 (20), 2730-2732, 1994
Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application
R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via
Journal of microelectromechanical systems 20 (3), 745-752, 2011
Development of a high-growth rate 3C-SiC on Si CVD process
M Reyes, Y Shishkin, S Harvey, SE Saddow
MRS Online Proceedings Library Archive 911, 2006
A comprehensive study of hydrogen etching on the major SiC polytypes and crystal orientations
CL Frewin, C Coletti, C Riedl, U Starke, SE Saddow
Materials science forum 615, 589-592, 2009
Wide-range (0.33%–100%) 3C–SiC resistive hydrogen gas sensor development
TJ Fawcett, JT Wolan, RL Myers, J Walker, SE Saddow
Applied Physics Letters 85 (3), 416-418, 2004
Method of crystal growth and resulted structures
M Mynbaeva, D Tsvetkov, V Dmitriev, A Lebedev, N Savkina, A Syrkin, ...
US Patent 6,579,359, 2003
Surface studies of hydrogen etched on Si(001)
C Coletti, CL Frewin, SE Saddow, M Hetzel, C Virojanadara, U Starke
Applied Physics Letters 91 (6), 061914, 2007
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