Critical Terrace Width for Two-Dimensional Nucleation during Si Growth on Si(111)-( DI Rogilo, LI Fedina, SS Kosolobov, BS Ranguelov, AV Latyshev
Physical Review Letters 111 (3), 036105, 2013
49 2013 On the role of mobile nanoclusters in 2D island nucleation on Si (111)-(7× 7) surface DI Rogilo, LI Fedina, SS Kosolobov, AV Latyshev
Surface Science 667, 1-7, 2018
18 2018 2D Si island nucleation on the Si (111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth DI Rogilo, LI Fedina, SS Kosolobov, BS Ranguelov, AV Latyshev
Journal of Crystal Growth 457, 188-195, 2017
18 2017 Etching of step-bunched Si (1 1 1) surface by Se molecular beam observed by in situ REM DI Rogilo, LI Fedina, SA Ponomarev, DV Sheglov, AV Latyshev
Journal of Crystal Growth 529, 125273, 2020
15 2020 SiCx y z N Bhaskar, V Sulyaeva, E Gatapova, V Kaichev, D Rogilo, M Khomyakov, ...
ACS Biomaterials Science & Engineering 6 (10), 5571-5587, 2020
13 2020 Adatom concentration distribution on an extrawide Si (111) terrace during sublimation DI Rogilo, NE Rybin, LI Fedina, AV Latyshev
Optoelectronics, Instrumentation and Data Processing 52, 501-507, 2016
13 2016 2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si (1 1 1)-(7× 7) surface at elevated temperatures AS Petrov, DI Rogilo, DV Sheglov, AV Latyshev
Journal of Crystal Growth 531, 125347, 2020
11 2020 Step bunching phenomena on Si (0 0 1) surface induced by DC heating during sublimation and Si deposition EE Rodyakina, SV Sitnikov, DI Rogilo, AV Latyshev
Journal of Crystal Growth 520, 85-88, 2019
11 2019 In situ reflection electron microscopy for the analysis of silicon surface processes: Sublimation, electromigration, and adsorption of impurity atoms DI Rogilo, SV Sitnikov, EE Rodyakina, AS Petrov, SA Ponomarev, ...
Crystallography Reports 66, 570-580, 2021
9 2021 In situ reflection electron microscopy for investigation of surface processes on Bi2Se3 (0001) SA Ponomarev, DI Rogilo, NN Kurus, LS Basalaeva, KA Kokh, ...
Journal of Physics: Conference Series 1984 (1), 012016, 2021
7 2021 Atomic structure of a single step and dynamics of Sn adatoms on the Si RA Zhachuk, DI Rogilo, AS Petrov, DV Sheglov, AV Latyshev, S Colonna, ...
Physical Review B 104 (12), 125437, 2021
6 2021 Structural and morphological instabilities of the Si (1 1 1)-7× 7 surface during silicon growth and etching by oxygen and selenium D Rogilo, S Sitnikov, S Ponomarev, D Sheglov, L Fedina, A Latyshev
Applied Surface Science 540, 148269, 2021
6 2021 Atomically Controlled Silicon Surface AV Latyshev, LI Fedina, DI Rogilo, SV Sitnikov, SS Kosolobov
Novosibirsk, Parallel, 2016
6 2016 Formation of Two-Dimensional Islands on the Si (111) Surface during Epitaxial Growth DI Rogilo, LI Fedina, SS Kosolobov, AV Latyshev
Vestn. NGU, Ser. Fizika 9 (2), 156-166, 2014
5 2014 Atomic processes on the silicon surface AV Latyshev, LI Fedina, SS Kosolobov, SV Sitnikov, DI Rogilo, ...
Advances in Semiconductor Nanostructures, 189-221, 2017
4 2017 Structural transitions on Si (1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM AS Petrov, DI Rogilo, RA Zhachuk, AI Vergules, DV Sheglov, AV Latyshev
Applied Surface Science 609, 155367, 2023
3 2023 Chemical structure and functional properties of amorphous boron carbonitride films VS Sulyaeva, EY Gatapova, AK Kozhevnikov, DI Rogilo, AA Saraev, ...
Journal of Structural Chemistry 62, 1309-1324, 2021
3 2021 Thermal Hysteresis in the Resistance of In2 Se3 Film on Si(111) Surface S Ponomarev, D Rogilo, A Mironov, D Sheglov, A Latyshev
2021 IEEE 22nd International Conference of Young Professionals in Electron …, 2021
3 2021 From self-organization of monoatomic steps on the silicon surface to subnanometer metrology DV Sheglov, SV Sitnikov, LI Fedina, DI Rogilo, AS Kozhukhov, ...
Optoelectronics, Instrumentation and Data Processing 56, 533-544, 2020
3 2020 Bottom-up generated height gauges for silicon-based nanometrology DV Sheglov, DI Rogilo, LI Fedina, SV Sitnikov, EV Sysoev, AV Latyshev
ACS Applied Materials & Interfaces 15 (9), 12511-12523, 2023
2 2023 
Sergey KosolobovSkoltechEmail verificata su skoltech.ru
