Christian Wenger
Christian Wenger
IHP GmbH - Leibniz institute for innovative microelectronics
Email verificata su ihp-microelectronics.com
Titolo
Citata da
Citata da
Anno
Residual metallic contamination of transferred chemical vapor deposited graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
2432015
Impact of Temperature on the Resistive Switching Behavior of Embedded-Based RRAM Devices
C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...
IEEE transactions on electron devices 58 (9), 3124-3131, 2011
1972011
Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions
EA Miranda, C Walczyk, C Wenger, T Schroeder
IEEE Electron Device Letters 31 (6), 609-611, 2010
1802010
Magnetic penetration depth and condensate density of cuprate high- superconductors determined by muon-spin-rotation experiments
C Bernhard, C Niedermayer, U Binninger, A Hofer, C Wenger, JL Tallon, ...
Physical Review B 52 (14), 10488, 1995
1181995
Pulse-induced low-power resistive switching in metal-insulator-metal diodes for nonvolatile memory applications
C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 114103, 2009
1162009
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 013513, 2013
1032013
Titanium-added praseodymium silicate high- layers on Si(001)
T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ...
Applied Physics Letters 87 (2), 022902, 2005
842005
Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO2
R Hbner, M Hecker, N Mattern, V Hoffmann, K Wetzig, C Wenger, ...
Thin Solid Films 437 (1-2), 248-256, 2003
832003
Anisotropy and dimensional crossover of the vortex state in crystals
C Bernhard, C Wenger, C Niedermayer, DM Pooke, JL Tallon, Y Kotaka, ...
Physical Review B 52 (10), R7050, 1995
731995
Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
D Walczyk, C Walczyk, T Schroeder, T Bertaud, M Sowińska, M Lukosius, ...
Microelectronic Engineering 88 (7), 1133-1135, 2011
662011
Microscopic model for the nonlinear behavior of high- metal-insulator-metal capacitors
C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Mssig, S Pasko, C Lohe
Journal of Applied Physics 103 (10), 104103, 2008
602008
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ...
Advanced Functional Materials 27 (32), 1700432, 2017
572017
Geometric conductive filament confinement by nanotips for resistive switching of HfO 2-RRAM devices with high performance
G Niu, P Calka, MA der Maur, F Santoni, S Guha, M Fraschke, ...
Scientific reports 6 (1), 1-9, 2016
572016
On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si (111)
T Schroeder, P Zaumseil, G Weidner, C Wenger, J Dabrowski, HJ Mssig, ...
Journal of applied physics 99 (1), 014101, 2006
562006
Structure and strain relaxation mechanisms of ultrathin epitaxial films on Si(111)
T Schroeder, TL Lee, L Libralesso, I Joumard, J Zegenhagen, P Zaumseil, ...
Journal of applied physics 97 (7), 074906, 2005
552005
First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics
C Wenger, J Dąbrowski, P Zaumseil, R Sorge, P Formanek, G Lippert, ...
Materials science in semiconductor processing 7 (4-6), 227-230, 2004
552004
Impact of intercell and intracell variability on forming and switching parameters in RRAM arrays
A Grossi, D Walczyk, C Zambelli, E Miranda, P Olivo, V Stikanov, A Feriani, ...
IEEE Transactions on Electron Devices 62 (8), 2502-2509, 2015
512015
Thin high- dielectric layers on TiN for memory capacitor applications
G Lupina, G Kozłowski, J Dabrowski, C Wenger, P Dudek, P Zaumseil, ...
Applied Physics Letters 92 (6), 062906, 2008
512008
Material insights of HfO 2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition
G Niu, HD Kim, R Roelofs, E Perez, MA Schubert, P Zaumseil, I Costina, ...
Scientific reports 6 (1), 1-11, 2016
492016
Praseodymium silicate films on Si (100) for gate dielectric applications: Physical and electrical characterization
G Lupina, T Schroeder, J Dabrowski, C Wenger, AU Mane, HJ Mssig, ...
Journal of applied physics 99 (11), 114109, 2006
492006
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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