Shanshan Wang (王珊珊)
Shanshan Wang (王珊珊)
Associate Professor of National University of Defense Technology, Joint Postdoc of Peking University
Email verificata su nudt.edu.cn - Home page
Titolo
Citata da
Citata da
Anno
Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition
S Wang, Y Rong, Y Fan, M Pacios, H Bhaskaran, K He, JH Warner
Chemistry of Materials 26 (22), 6371-6379, 2014
5412014
All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
S Wang, X Wang, JH Warner
ACS nano 9 (5), 5246-5254, 2015
2902015
Controlling sulphur precursor addition for large single crystal domains of WS 2
Y Rong, Y Fan, AL Koh, AW Robertson, K He, S Wang, H Tan, R Sinclair, ...
Nanoscale 6 (20), 12096-12103, 2014
1492014
Detailed Atomic Reconstruction of Extended Line Defects in Monolayer MoS2
S Wang, GD Lee, S Lee, E Yoon, JH Warner
ACS nano 10 (5), 5419-5430, 2016
1092016
Edge-Enriched 2D MoS2 Thin Films Grown by Chemical Vapor Deposition for Enhanced Catalytic Performance
S Li, S Wang, MM Salamone, AW Robertson, S Nayak, H Kim, SCE Tsang, ...
ACS Catalysis 7, 877-886, 2016
852016
Atomically Sharp Crack Tips in Monolayer MoS2 and Their Enhanced Toughness by Vacancy Defects
S Wang, Z Qin, GS Jung, FJ Martin-Martinez, K Zhang, MJ Buehler, ...
ACS nano 10 (11), 9831-9839, 2016
822016
Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides
S Wang, A Robertson, JH Warner
Chemical Society Reviews, 2018
802018
Atomic Structure and Dynamics of Single Platinum Atom Interactions with Monolayer MoS2
H Li, S Wang, H Sawada, GGD Han, T Samuels, CS Allen, AI Kirkland, ...
ACS nano 11 (3), 3392-3403, 2017
752017
Atomic Structure and Spectroscopy of Single Metal (Cr, V) Substitutional Dopants in Monolayer MoS2
AW Robertson, YC Lin, S Wang, H Sawada, CS Allen, Q Chen, S Lee, ...
ACS nano 10 (11), 10227-10236, 2016
702016
Substrate control for large area continuous films of monolayer MoS2 by atmospheric pressure chemical vapor deposition
S Wang, M Pacios, H Bhaskaran, JH Warner
Nanotechnology 27 (8), 085604, 2016
702016
Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition
H Tan, Y Fan, Y Rong, B Porter, CS Lau, Y Zhou, Z He, S Wang, ...
ACS applied materials & interfaces 8 (3), 1644-1652, 2016
562016
Large Dendritic Monolayer MoS2 Grown by Atmospheric Pressure Chemical Vapor Deposition for Electrocatalysis
W Xu, S Li, S Zhou, JK Lee, S Wang, SG Sarwat, X Wang, H Bhaskaran, ...
ACS applied materials & interfaces, 2018
492018
Atomically Flat Zigzag Edges in Monolayer MoS2 by Thermal Annealing
Q Chen, H Li, W Xu, S Wang, H Sawada, CS Allen, AI Kirkland, ...
Nano Letters, 2017
472017
Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition
RJ Chang, X Wang, S Wang, Y Sheng, B Porter, H Bhaskaran, JH Warner
Chemistry of Materials, 2017
452017
Ultrafast carrier transfer promoted by interlayer coulomb coupling in 2D/3D perovskite heterostructures
K Wei, T Jiang, Z Xu, J Zhou, J You, Y Tang, H Li, R Chen, X Zheng, ...
Laser & Photonics Reviews 12 (10), 1800128, 2018
432018
Atomic structure and formation mechanism of sub-nanometer pores in 2D monolayer MoS 2
S Wang, H Li, H Sawada, CS Allen, AI Kirkland, JC Grossman, JH Warner
Nanoscale, 2017
342017
Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride
OM Thomas
CrystEngComm 19 (2), 285-294, 2017
332017
Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS2 Monolayers
Y Jin, Z Zeng, Z Xu, YC Lin, K Bi, G Shao, TS Hu, S Wang, S Li, ...
Chem. Mater. 31 (9), 3534-3541, 2019
292019
Determining the Optimized Interlayer Separation Distance in Vertical Stacked 2D WS2: hBN: MoS2 Heterostructures for Exciton Energy Transfer
W Xu, D Kozawa, Y Liu, Y Sheng, K Wei, VB Koman, S Wang, X Wang, ...
Small, 2018
292018
High-Temperature Corrosion Behavior of SiBCN Fibers for Aerospace Applications
X Ji, S Wang, C Shao, H Wang
ACS Appl. Mater. Interfaces 10 (23), 19712–19720, 2018
242018
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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