Segui
Matthew Beck
Matthew Beck
Chemical and Materials Engineering, University of Kentucky
Email verificata su engr.uky.edu - Home page
Titolo
Citata da
Citata da
Anno
Nanoceria: factors affecting its pro-and anti-oxidant properties
E Grulke, K Reed, M Beck, X Huang, A Cormack, S Seal
Environmental Science: Nano 1 (5), 429-444, 2014
1672014
Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ...
Journal of Applied Physics 109 (3), 2011
1542011
Origin of colossal ionic conductivity in oxide multilayers: interface induced sublattice disorder
TJ Pennycook, MJ Beck, K Varga, M Varela, SJ Pennycook, ST Pantelides
Physical review letters 104 (11), 115901, 2010
1502010
Key role of the wetting layer in revealing the hidden path of Ge/Si (001) Stranski-Krastanow growth onset
M Brehm, F Montalenti, M Grydlik, G Vastola, H Lichtenberger, N Hrauda, ...
Physical Review B 80 (20), 205321, 2009
1132009
Role of Strain-Dependent Surface Energies in Island Formation
OE Shklyaev, MJ Beck, M Asta, MJ Miksis, PW Voorhees
Physical review letters 94 (17), 176102, 2005
1022005
Frontiers in thermionic cathode research
DM Kirkwood, SJ Gross, TJ Balk, MJ Beck, J Booske, D Busbaher, ...
IEEE Transactions on Electron Devices 65 (6), 2061-2071, 2018
882018
Surface energetics and structure of the Ge wetting layer on Si (100)
MJ Beck, A Van de Walle, M Asta
Physical Review B 70 (20), 205337, 2004
802004
Diffusivity control in molecule-on-metal systems using electric fields
N Jiang, YY Zhang, Q Liu, ZH Cheng, ZT Deng, SX Du, HJ Gao, MJ Beck, ...
Nano letters 10 (4), 1184-1188, 2010
752010
Effects of stress on lithium transport in amorphous silicon electrodes for lithium-ion batteries
J Pan, Q Zhang, J Li, MJ Beck, X Xiao, YT Cheng
Nano Energy 13, 192-199, 2015
722015
Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer
G Chen, B Sanduijav, D Matei, G Springholz, D Scopece, MJ Beck, ...
Physical review letters 108 (5), 055503, 2012
502012
Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs
A Kalavagunta, M Silvestri, MJ Beck, SK Dixit, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 56 (6), 3192-3195, 2009
392009
Scandate cathode surface characterization: Emission testing, elemental analysis and morphological evaluation
X Liu, Q Zhou, TL Maxwell, BK Vancil, MJ Beck, TJ Balk
Materials Characterization 148, 188-200, 2019
382019
Atomic displacement effects in single-event gate rupture
MJ Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ST Pantelides
IEEE Transactions on Nuclear Science 55 (6), 3025-3031, 2008
382008
Dynamical effects in the interaction of ion beams with solids
R Hatcher, M Beck, A Tackett, ST Pantelides
Physical review letters 100 (10), 103201, 2008
382008
The characterization of purified citrate-coated cerium oxide nanoparticles prepared via hydrothermal synthesis
ML Hancock, RA Yokel, MJ Beck, JL Calahan, TW Jarrells, EJ Munson, ...
Applied Surface Science 535, 147681, 2021
362021
BaxScyOz on W (0 0 1),(1 1 0), and (1 1 2) in scandate cathodes: Connecting to experiment via μO and equilibrium crystal shape
Q Zhou, X Liu, T Maxwell, B Vancil, TJ Balk, MJ Beck
Applied Surface Science 458, 827-838, 2018
352018
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting
D Scopece, F Montalenti, MJ Beck
Physical Review B 85 (8), 085312, 2012
332012
Performance, reliability, radiation effects, and aging issues in microelectronics–From atomic-scale physics to engineering-level modeling
ST Pantelides, L Tsetseris, MJ Beck, SN Rashkeev, G Hadjisavvas, ...
Solid-State Electronics 54 (9), 841-848, 2010
332010
Toward tuning the surface functionalization of small ceria nanoparticles
X Huang, B Wang, EA Grulke, MJ Beck
The Journal of Chemical Physics 140 (7), 2014
292014
The role of atomic displacements in ion-induced dielectric breakdown
MJ Beck, YS Puzyrev, N Sergueev, K Varga, RD Schrimpf, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 56 (6), 3210-3217, 2009
282009
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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