Ferenc Riesz
Ferenc Riesz
Centre for Energy Research, Institute for Technical Physics and
Email verificata su mfa.kfki.hu
Citata da
Citata da
Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces
IE Lukács, J Makai, L Pfitzner, F Riesz, B Szentpali
US Patent 7,133,140, 2006
Geometrical optical model of the image formation in Makyoh (magic-mirror) topography
F Riesz
Journal of Physics D: Applied Physics 33 (23), 3033, 2000
Lattice misfit and relative tilt of lattice planes in semiconductor heterostructures
A Pesek, K Hingerl, F Riesz, K Lischka
Semiconductor science and technology 6 (7), 705, 1991
Crystallographic tilting in high‐misfit (100) semiconductor heteroepitaxial systems
F Riesz
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (2 …, 1996
A transient method for measuring current-voltage characteristics with negative differential resistance regions
L Dozsa, F Riesz, J Karányi, V Van Tuyen, B Szentpáli
Physica status solidi. A. Applied research 163 (1), R1-R2, 1997
Crystallographic tilting in lattice‐mismatched heteroepitaxy: A Dodson–Tsao relaxation approach
F Riesz
Journal of applied physics 79 (8), 4111-4117, 1996
Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions
F Riesz, K Lischka, K Rakennus, T Hakkarainen, A Pesek
Journal of crystal growth 114 (1-2), 127-132, 1991
Makyoh topography: a simple yet powerful optical method for flatness and defect characterization of mirror-like surfaces
F Riesz
Optical Micro-and Nanometrology in Manufacturing Technology 5458, 86-100, 2004
Makyoh topography for the morphological study of compound semiconductor wafers and structures
F Riesz
Materials Science and Engineering: B 80 (1-3), 220-223, 2001
Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric study
F Riesz, L Dobos, J Karanyi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
Makyoh topography: curvature measurements and implications for the image formation
J Szabó, F Riesz, B Szentpáli
Japanese journal of applied physics 35 (2B), L258, 1996
Ion implantation modified stainless steel as a substrate for hydroxyapatite deposition. Part I. Surface modification and characterization
L Pramatarova, E Pecheva, V Krastev, F Riesz
Journal of Materials Science: Materials in Medicine 18 (3), 435-440, 2007
Camera length and field of view in Makyoh-topography instruments
F Riesz
Review of Scientific Instruments 72 (2), 1591-1593, 2001
Rotated tilting in lattice-mismatched heteroepitaxial systems
F Riesz
Journal of crystal growth 140 (1-2), 213-218, 1994
Thermal decomposition of InP surfaces: volatile component loss, morphological changes, and pattern formation
F Riesz, L Dobos, C Vignali, C Pelosi
Materials Science and Engineering: B 80 (1-3), 54-59, 2001
Carrier profiling of a heterojunction bipolar transistor and p–i–n photodiode structures by electrochemical C–V technique
R Kinder, Á Nemcsics, R Harman, F Riesz, B Pécz
physica status solidi (a) 175 (2), 631-636, 1999
Mapping of Bragg-surface diffraction of InP/GaAs (1 0 0) structure
LH Avanci, MA Hayashi, LP Cardoso, SL Morelhăo, F Riesz, K Rakennus, ...
Journal of crystal growth 188 (1-4), 220-224, 1998
Makyoh Topography for the Study of Large‐Area Extended Defects in Semiconductors
F Riesz
physica status solidi (a) 171 (1), 403-409, 1999
Can epilayer tilt relieve misfit strain in lattice-mismatched heterostructures?
F Riesz
Vacuum 46 (8-10), 1021-1023, 1995
Thermo-mechanical design and characterization of low dissipation micro-hotplates operated above 500° C
F Biró, C Dücső, Z Hajnal, F Riesz, AE Pap, I Bársony
Microelectronics Journal 45 (12), 1822-1828, 2014
Il sistema al momento non puň eseguire l'operazione. Riprova piů tardi.
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