Nilanjan Das
Nilanjan Das
Email verificata su intel.com
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Citata da
Citata da
Anno
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
702018
13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique
L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019
482019
Electric-field-induced submicrosecond resistive switching
N Das, S Tsui, YY Xue, YQ Wang, CW Chu
Physical Review B 78 (23), 235418, 2008
412008
2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications
JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ...
2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019
182019
Non-volatile RRAM embedded into 22FFL FinFET technology
O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ...
2019 Symposium on VLSI Technology, T230-T231, 2019
142019
Kinetics and relaxation of electroresistance in transition metal oxides: Model for resistive switching
N Das, S Tsui, YY Xue, YQ Wang, CW Chu
Physical Review B 80 (11), 115411, 2009
112009
Interfacial resistive oxide switch induced by reversible modification of defect structures
S Tsui, YY Xue, N Das, YQ Wang, CW Chu
Physical Review B 80 (16), 165415, 2009
62009
Electric Field Induced Resistive Switch in Transition Metal Oxides: A``Model''for Future Non-Volatile Memory Devices
N Das, Y Xue, YQ Wang
APS March Meeting Abstracts 2010, T38. 003, 2010
2010
E-field induced resistive switch in metal/praseodymium calcium manganite interfaces: A model for future nonvolatile memory devices
N Das
University of Houston, 2010
2010
Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device
N Das, YY Xue, YQ Wang, CW Chu
2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS), 28-47, 2009
2009
Determination of Non-Accumulative Effects in PCMO Resistive Switches
S Tsui, N Das, YQ Wang, YY Xue, CW Chu
APS March Meeting Abstracts, B35. 008, 2008
2008
A Physical Model for Resistive Switching In Metal-Oxide Interface
N Das, S Tsui, Y Wang, Y Xue, CW Chu
APS March Meeting Abstracts, B35. 009, 2008
2008
Identifying Read/Write Speeds for Field-Induced Interfacial Resistive Switching.
S Tsui, N Das, Y Wang, Y Xue, CW Chu
APS March Meeting Abstracts, Y38. 006, 2007
2007
Characterizing oxide surfaces for successful interfacial resistive switching
N Das, S Tsui, W Wang, Y Xue, CW Chu
APS March Meeting Abstracts, Y38. 008, 2007
2007
Capacitance Investigation of the Field-Induced Resistive Switching Interface
S Tsui, N Das, Y Wang, Y Xue, CW Chu
APS March Meeting Abstracts, Y12. 001, 2006
2006
Bipolar Resistive Switching: a Defect Driven Nonvolatile Memory
S Tsui, N Das, Y Xue, CW Chu
Bulletin of the American Physical Society, 2005
2005
Heat shield for a catalytic converter
H Li, M Narayanan, W Koivula, N Das, R Sanderson
US Patent App. 10/725,870, 2005
2005
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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