Defect identification in semiconductors with positron annihilation: Experiment and theory F Tuomisto, I Makkonen
Reviews of Modern Physics 85 (4), 1583, 2013
732 2013 Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO F Tuomisto, V Ranki, K Saarinen, DC Look
Physical Review Letters 91 (20), 205502, 2003
563 2003 Introduction and recovery of point defects in electron-irradiated ZnO F Tuomisto, K Saarinen, DC Look, GC Farlow
Physical Review B 72 (8), 085206, 2005
408 2005 Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO DC Look, KD Leedy, L Vines, BG Svensson, A Zubiaga, F Tuomisto, ...
Physical Review B 84 (11), 115202, 2011
224 2011 Electrical compensation by Ga vacancies in Ga2O3 thin films E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ...
Applied Physics Letters 106 (24), 2015
188 2015 Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation KE Knutsen, A Galeckas, A Zubiaga, F Tuomisto, GC Farlow, ...
Physical Review B 86 (12), 121203, 2012
178 2012 Vacancy defect and defect cluster energetics in ion-implanted ZnO Y Dong, F Tuomisto, BG Svensson, AY Kuznetsov, LJ Brillson
Physical Review B 81 (8), 081201, 2010
151 2010 Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN F Tuomisto, K Saarinen, B Lucznik, I Grzegory, H Teisseyre, T Suski, ...
Applied Physics Letters 86 (3), 2005
126 2005 Hierarchical porosity in self‐assembled polymers: post‐modification of block copolymer–phenolic resin complexes by pyrolysis allows the control of micro‐and mesoporosity S Valkama, A Nykänen, H Kosonen, R Ramani, F Tuomisto, P Engelhardt, ...
Advanced Functional Materials 17 (2), 183-190, 2007
122 2007 Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN F Tuomisto, V Ranki, DC Look, GC Farlow
Physical Review B 76 (16), 165207, 2007
92 2007 Identification of the JM Mäki, I Makkonen, F Tuomisto, A Karjalainen, S Suihkonen, ...
Physical Review B 84 (8), 081204, 2011
86 2011 Effects of grain size and deformation temperature on hydrogen-enhanced vacancy formation in Ni alloys SK Lawrence, Y Yagodzinskyy, H Hänninen, E Korhonen, F Tuomisto, ...
Acta Materialia 128, 218-226, 2017
81 2017 Vacancy clustering and acceptor activation in nitrogen-implanted ZnO TM Børseth, F Tuomisto, JS Christensen, EV Monakhov, BG Svensson, ...
Physical Review B 77 (4), 045204, 2008
80 2008 Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2 I Makkonen, E Korhonen, V Prozheeva, F Tuomisto
Journal of Physics: Condensed Matter 28 (22), 224002, 2016
79 2016 Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN C Rauch, I Makkonen, F Tuomisto
Physical Review B 84 (12), 125201, 2011
73 2011 Positron annihilation lifetime spectroscopy of ZnO bulk samples A Zubiaga, F Plazaola, JA Garcia, F Tuomisto, V Muñoz-Sanjosé, ...
Physical Review B 76 (8), 085202, 2007
71 2007 Evaluation of the concentration of point defects in GaN MA Reshchikov, A Usikov, H Helava, Y Makarov, V Prozheeva, ...
Scientific Reports 7 (1), 9297, 2017
69 2017 Identification of substitutional Li in KM Johansen, A Zubiaga, I Makkonen, F Tuomisto, PT Neuvonen, ...
Physical Review B 83 (24), 245208, 2011
69 2011 Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness A Zubiaga, F Tuomisto, F Plazaola, K Saarinen, JA Garcia, ...
Applied Physics Letters 86 (4), 2005
67 2005 Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template D Gogova, A Kasic, H Larsson, C Hemmingsson, B Monemar, F Tuomisto, ...
Journal of applied physics 96 (1), 799-806, 2004
66 2004 
Ilja MakkonenUniversity Lecturer, University of HelsinkiEmail verificata su helsinki.fi
