Antonio Polimeni
Antonio Polimeni
Dipartimento di Fisica, Sapienza UniversitÓ di Roma
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Cited by
Cited by
Temperature dependence of the optical properties of self-organized quantum dots
A Polimeni, A Patane, M Henini, L Eaves, PC Main
Physical Review B 59 (7), 5064, 1999
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
A Polimeni, M Capizzi, M Geddo, M Fischer, M Reinhardt, A Forchel
Applied Physics Letters 77 (18), 2870-2872, 2000
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in
F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ...
Physical Review B 73 (7), 073201, 2006
Physics and applications of dilute nitrides
I Buyanova, W Chen
CRC Press, 2004
Trends in the electronic structure of dilute nitride alloys
EP O'Reilly, A Lindsay, PJ Klar, A Polimeni, M Capizzi
Semiconductor science and technology 24 (3), 033001, 2009
Electronic structure of self-assembled InAs quantum dots in GaAs matrix
PN Brounkov, A Polimeni, ST Stoddart, M Henini, L Eaves, PC Main, ...
Applied physics letters 73 (8), 1092-1094, 1998
Effect of hydrogen on the electronic properties of quantum wells
A Polimeni, HM Bissiri, M Capizzi, M Fischer, M Reinhardt, A Forchel
Physical Review B 63 (20), 201304, 2001
Influence of bismuth incorporation on the valence and conduction band edges of
G Pettinari, A Polimeni, M Capizzi, JH Blokland, PCM Christianen, ...
Applied Physics Letters 92 (26), 262105, 2008
Effect of nitrogen on the temperature dependence of the energy gap in single quantum wells
A Polimeni, M Capizzi, M Geddo, M Fischer, M Reinhardt, A Forchel
Physical Review B 63 (19), 195320, 2001
Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells
G Baldassarri H. v. H, M Bissiri, A Polimeni, M Capizzi, M Fischer, ...
Applied Physics Letters 78 (22), 3472-3474, 2001
Early manifestation of localization effects in diluted Ga (AsN)
F Masia, A Polimeni, G Baldassarri H÷ger von H÷gersthal, M Bissiri, ...
Applied physics letters 82 (25), 4474-4476, 2003
Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
A Polimeni, A Patane, M Capizzi, F Martelli, L Nasi, G Salviati
Physical Review B 53 (8), R4213, 1996
Linewidth analysis of the photoluminescence of As/GaAs quantum wells (x=0.09, 0.18, 1.0)
A PatanŔ, A Polimeni, M Capizzi, F Martelli
Physical Review B 52 (4), 2784, 1995
Piezoelectric effects in self-assembled quantum dots grown on GaAs substrates
A Patane, A Levin, A Polimeni, F Schindler, PC Main, L Eaves, M Henini
Applied Physics Letters 77 (19), 2979-2981, 2000
Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures
PN Brunkov, AR Kovsh, VM Ustinov, YG Musikhin, NN Ledentsov, ...
Journal of electronic materials 28 (5), 486-490, 1999
Nitrogen-hydrogen complex in revealed by x-ray absorption spectroscopy
G Ciatto, F Boscherini, AA Bonapasta, F Filippone, A Polimeni, M Capizzi
Physical Review B 71 (20), 201301, 2005
Optical properties and device applications of (InGa)As self-assembled quantum dots grown on GaAs substrates
A Polimeni, M Henini, A Patane, L Eaves, PC Main, G Hill
Applied physics letters 73 (10), 1415-1417, 1998
In‐plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors
M Felici, A Polimeni, G Salviati, L Lazzarini, N Armani, F Masia, M Capizzi, ...
Advanced Materials 18 (15), 1993-1997, 2006
Hydrogen-induced improvements in optical quality of GaNAs alloys
IA Buyanova, M Izadifard, WM Chen, A Polimeni, M Capizzi, HP Xin, ...
Applied physics letters 82 (21), 3662-3664, 2003
Compositional dependence of the exciton reduced mass in
G Pettinari, A Polimeni, JH Blokland, R Trotta, PCM Christianen, ...
Physical Review B 81 (23), 235211, 2010
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