| Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels B Arnaudov, T Paskova, PP Paskov, B Magnusson, E Valcheva, ... Physical Review B 69 (11), 115216, 2004 | 235 | 2004 |
| The silicon vacancy in SiC E Janzén, A Gali, P Carlsson, A Gällström, B Magnusson, NT Son Physica B: Condensed Matter 404 (22), 4354-4358, 2009 | 126 | 2009 |
| Electronic structure of the neutral silicon vacancy in and SiC M Wagner, B Magnusson, WM Chen, E Janzén, E Sörman, C Hallin, ... Physical Review B 62 (24), 16555, 2000 | 107 | 2000 |
| Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC NT Son, B Magnusson, E Janzén Applied physics letters 81 (21), 3945-3947, 2002 | 89 | 2002 |
| Defects and carrier compensation in semi-insulating substrates NT Son, P Carlsson, J Ul Hassan, B Magnusson, E Janzén Physical Review B 75 (15), 155204, 2007 | 88 | 2007 |
| Homoepitaxial growth of SiC on low off-axis SiC wafers A Ellison, C Hallin, B Magnusson, P Bergman US Patent 7,531,433, 2009 | 79 | 2009 |
| SiC crystal growth by HTCVD A Ellison, B Magnusson, B Sundqvist, GR Pozina, P Bergman, E Janzén, ... Materials Science Forum 457, 9-14, 2004 | 78 | 2004 |
| HTCVD growth of semi-insulating 4H-SiC crystals with low defect density A Ellison, B Magnusson, C Hemmingsson, W Magnusson, T Iakimov, ... MRS Online Proceedings Library (OPL) 640, H1. 2, 2000 | 74 | 2000 |
| Defects in high-purity semi-insulating SiC NT Son, B Magnusson, Z Zolnai, A Ellison, E Janzén Materials Science Forum 457, 437-442, 2004 | 65 | 2004 |
| Excitation properties of the divacancy in -SiC B Magnusson, NT Son, A Csóré, A Gällström, T Ohshima, A Gali, ... Physical Review B 98 (19), 195202, 2018 | 64 | 2018 |
| Identification and tunable optical coherent control of transition-metal spins in silicon carbide T Bosma, GJJ Lof, CM Gilardoni, OV Zwier, F Hendriks, B Magnusson, ... npj Quantum Information 4 (1), 48, 2018 | 62 | 2018 |
| HTCVD grown semi-insulating SiC substrates A Ellison, B Magnusson, NT Son, L Storasta, E Janzén Materials Science Forum 433, 33-38, 2003 | 61 | 2003 |
| Silicon carbide—a high-transparency nonlinear material for THz applications M Naftaly, JF Molloy, B Magnusson, YM Andreev, GV Lanskii Optics express 24 (3), 2590-2595, 2016 | 52 | 2016 |
| Defects in semi-insulating SiC substrates NT Son, B Magnusson, Z Zolnai, A Ellison, E Janzén Materials Science Forum 433, 45-50, 2003 | 52 | 2003 |
| Optical characterization of deep level defects in SiC B Magnusson, E Janzén Materials Science Forum 483, 341-346, 2005 | 51 | 2005 |
| Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC NT Son, A Ellison, B Magnusson, MF MacMillan, WM Chen, B Monemar, ... Journal of applied physics 86 (8), 4348-4353, 1999 | 49 | 1999 |
| Analysis of the sharp donor-acceptor pair luminescence in -SiC doped with nitrogen and aluminum IG Ivanov, B Magnusson, E Janzén Physical Review B 67 (16), 165211, 2003 | 48 | 2003 |
| Characterisation and defects in silicon carbide JP Bergman, H Jakobsson, L Storasta, F Carlsson, B Magnusson, ... Materials Science Forum, Vols. 389-393, 2002 | 47 | 2002 |
| Optical and structural characteristics of virtually unstrained bulk-like GaN D Gogova, A Kasic, H Larsson, B Pécz, R Yakimova, B Magnusson, ... Japanese journal of applied physics 43 (4R), 1264, 2004 | 45 | 2004 |
| Clustering of vacancy defects in high-purity semi-insulating SiC R Aavikko, K Saarinen, F Tuomisto, B Magnusson, NT Son, E Janzén Physical Review B 75 (8), 085208, 2007 | 41 | 2007 |
