Andres Cuevas
Andres Cuevas
Emeritus Professor, School of Engineering, The Australian National
Verified email at - Homepage
Cited by
Cited by
Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data
RA Sinton, A Cuevas
Applied Physics Letters 69 (17), 2510-2512, 1996
High-efficiency crystalline silicon solar cells: status and perspectives
C Battaglia, A Cuevas, S De Wolf
Energy & Environmental Science 9 (5), 1552-1576, 2016
Improved quantitative description of Auger recombination in crystalline silicon
A Richter, SW Glunz, F Werner, J Schmidt, A Cuevas
Physical review B 86 (16), 165202, 2012
Quasi-steady-state photoconductance, a new method for solar cell material and device characterization
RA Sinton, A Cuevas, M Stuckings
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists …, 1996
A quasi-steady-state open-circuit voltage method for solar cell characterization
RA Sinton, A Cuevas
16th European Photovoltaic Solar Energy Conference 25, 1152-1155, 2000
General parameterization of Auger recombination in crystalline silicon
MJ Kerr, A Cuevas
Journal of Applied Physics 91 (4), 2473-2480, 2002
Efficient silicon solar cells with dopant-free asymmetric heterocontacts
J Bullock, M Hettick, J Geissbühler, AJ Ong, T Allen, CM Sutter-Fella, ...
Nature Energy 1 (3), 1-7, 2016
Charge carrier separation in solar cells
U Würfel, A Cuevas, P Würfel
IEEE Journal of Photovoltaics 5 (1), 461-469, 2014
Measuring and interpreting the lifetime of silicon wafers
A Cuevas, D Macdonald
Solar Energy 76 (1-3), 255-262, 2004
Texturing industrial multicrystalline silicon solar cells
DH Macdonald, A Cuevas, MJ Kerr, C Samundsett, D Ruby, ...
Solar energy 76 (1-3), 277-283, 2004
Very low bulk and surface recombination in oxidized silicon wafers
MJ Kerr, A Cuevas
Semiconductor science and technology 17 (1), 35, 2001
Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells
J Bullock, A Cuevas, T Allen, C Battaglia
Applied Physics Letters 105 (23), 2014
Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks
J Schmidt, M Kerr, A Cuevas
Semiconductor science and technology 16 (3), 164, 2001
Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
MJ Kerr, J Schmidt, A Cuevas, JH Bultman
Journal of applied physics 89 (7), 3821-3826, 2001
Trapping of minority carriers in multicrystalline silicon
D Macdonald, A Cuevas
Applied Physics Letters 74 (12), 1710-1712, 1999
Surface recombination velocity of highly doped n‐type silicon
A Cuevas, PA Basore, G Giroult‐Matlakowski, C Dubois
Journal of Applied Physics 80 (6), 3370-3375, 1996
Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
J Schmidt, A Cuevas
Journal of Applied Physics 86 (6), 3175-3180, 1999
Transition-metal profiles in a multicrystalline silicon ingot
D Macdonald, A Cuevas, A Kinomura, Y Nakano, LJ Geerligs
Journal of Applied Physics 97 (3), 2005
Numerical modeling of highly doped Si: P emitters based on Fermi–Dirac statistics and self-consistent material parameters
PP Altermatt, JO Schumacher, A Cuevas, MJ Kerr, SW Glunz, RR King, ...
Journal of Applied Physics 92 (6), 3187-3197, 2002
50 Per cent more output power from an albedo-collecting flat panel using bifacial solar cells
A Cuevas, A Luque, J Eguren, J del Alamo
Solar Energy 29 (5), 419-420, 1982
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