| Optical properties of low band gap layers: Influence of post-growth treatments EVK Rao, A Ougazzaden, Y Le Bellego, M Juhel Applied physics letters 72 (12), 1409-1411, 1998 | 212 | 1998 |
| System and method for determining driver signatures ID Adams, SJ Fernandes, MJ Natrillo, PB Olson, P Prakash US Patent 10,134,091, 2018 | 145 | 2018 |
| Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine A Ougazzaden, Y Le Bellego, EVK Rao, M Juhel, L Leprince, G Patriarche Applied physics letters 70 (21), 2861-2863, 1997 | 129 | 1997 |
| Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN DJ Rogers, F Hosseini Teherani, A Ougazzaden, S Gautier, L Divay, ... Applied Physics Letters 91 (7), 071120, 2007 | 116 | 2007 |
| Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN DJ Rogers, F Hosseini Teherani, A Ougazzaden, S Gautier, L Divay, ... Applied Physics Letters 91 (7), 071120, 2007 | 113 | 2007 |
| 20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage F Devaux, F Dorgeuille, A Ougazzaden, F Huet, M Carre, A Carenco, ... IEEE photonics technology letters 5 (11), 1288-1290, 1993 | 113 | 1993 |
| 20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage F Devaux, F Dorgeuille, A Ougazzaden, F Huet, M Carre, A Carenco, ... IEEE photonics technology letters 5 (11), 1288-1290, 1993 | 113 | 1993 |
| Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission A Ramdane, F Devaux, N Souli, D Delprat, A Ougazzaden IEEE Journal of Selected Topics in Quantum Electronics 2 (2), 326-335, 1996 | 103 | 1996 |
| 40-Gb/s tandem electroabsorption modulator B Mason, A Ougazzaden, CW Lentz, KG Glogovsky, CL Reynolds, ... IEEE Photonics Technology Letters 14 (1), 27-29, 2002 | 94 | 2002 |
| Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ... Science 362 (6415), 665-670, 2018 | 83 | 2018 |
| Bandgap energy bowing parameter of strained and relaxed InGaN layers G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ... Optical Materials Express 4 (5), 1030-1041, 2014 | 78 | 2014 |
| Self‐induced laterally modulated GaInP/InAsP structure grown by metal‐organic vapor‐phase epitaxy A Ponchet, A Rocher, A Ougazzaden, A Mircea Journal of applied physics 75 (12), 7881-7883, 1994 | 72 | 1994 |
| Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018 | 66 | 2018 |
| Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE A Mircea, A Ougazzaden, G Primot, C Kazmierski Journal of crystal growth 124 (1-4), 737-740, 1992 | 66 | 1992 |
| Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires A Izrael, B Sermage, JY Marzin, A Ougazzaden, R Azoulay, J Etrillard, ... Applied physics letters 56 (9), 830-832, 1990 | 66 | 1990 |
| Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration A Ramdane, A Ougazzaden, F Devaux, F Delorme, M Schneider, ... Electronics letters 30 (23), 1980-1981, 1994 | 64 | 1994 |
| Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy X Li, S Sundaram, Y El Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ... Crystal Growth & Design 16 (6), 3409-3415, 2016 | 59 | 2016 |
| Electroabsorption modulators for high-bit-rate optical communications: a comparison of strained InGaAs/InAIAs and InGaAsP/InGaAsP MQW F Devaux, S Chelles, A Ougazzaden, A Mircea, JC Harmand Semiconductor science and technology 10 (7), 887, 1995 | 59 | 1995 |
| Investigation of carrier heating and spectral hole burning in semiconductor amplifiers by highly nondegenerate four‐wave mixing A D’Ottavi, E Iannone, A Mecozzi, S Scotti, P Spano, J Landreau, ... Applied physics letters 64 (19), 2492-2494, 1994 | 56 | 1994 |
| Investigation of carrier heating and spectral hole burning in semiconductor amplifiers by highly nondegenerate four‐wave mixing A D’Ottavi, E Iannone, A Mecozzi, S Scotti, P Spano, J Landreau, ... Applied physics letters 64 (19), 2492-2494, 1994 | 56 | 1994 |
