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James Gallagher
James Gallagher
Naval Research Laboratory
Email verificata su osu.edu
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Citata da
Citata da
Anno
Robust zero-field skyrmion formation in FeGe epitaxial thin films
JC Gallagher, KY Meng, JT Brangham, HL Wang, BD Esser, DW McComb, ...
Physical review letters 118 (2), 027201, 2017
1302017
Solar-cycle characteristics examined in separate hemispheres: phase, Gnevyshev gap, and length of minimum
AA Norton, JC Gallagher
Solar Physics 261, 193-207, 2010
1022010
GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging
MJ Tadjer, TJ Anderson, MG Ancona, PE Raad, P Komarov, T Bai, ...
IEEE Electron Device Letters 40 (6), 881-884, 2019
692019
Exceptionally high magnetization of stoichiometric Y3Fe5O12 epitaxial films grown on Gd3Ga5O12
JC Gallagher, AS Yang, JT Brangham, BD Esser, SP White, MR Page, ...
Applied Physics Letters 109 (7), 2016
512016
The effect of chemical pressure on the structure and properties of A2CrOsO6 (A= Sr, Ca) ferrimagnetic double perovskite
R Morrow, JR Soliz, AJ Hauser, JC Gallagher, MA Susner, MD Sumption, ...
Journal of Solid State Chemistry 238, 46-52, 2016
482016
Thickness dependence of spin Hall angle of Au grown on epitaxial films
JT Brangham, KY Meng, AS Yang, JC Gallagher, BD Esser, SP White, ...
Physical Review B 94 (5), 054418, 2016
452016
Epitaxial growth of iridate pyrochlore Nd2Ir2O7 films
JC Gallagher, BD Esser, R Morrow, SR Dunsiger, REA Williams, ...
Scientific reports 6 (1), 22282, 2016
452016
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
JK Hite, TJ Anderson, LE Luna, JC Gallagher, MA Mastro, JA Freitas, ...
Journal of Crystal Growth 498, 352-356, 2018
392018
High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
MJ Tadjer, AD Koehler, JA Freitas, JC Gallagher, MC Specht, ER Glaser, ...
Applied Physics Letters 113 (19), 2018
382018
Long range, non-destructive characterization of GaN substrates for power devices
JC Gallagher, TJ Anderson, LE Luna, AD Koehler, JK Hite, NA Mahadik, ...
Journal of Crystal Growth 506, 178-184, 2019
302019
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ...
Journal of Physics D: Applied Physics 54 (3), 034005, 2020
292020
Room-temperature skyrmions in strain-engineered FeGe thin films
S Budhathoki, A Sapkota, KM Law, S Ranjit, B Nepal, BD Hoskins, ...
Physical Review B 101 (22), 220405, 2020
242020
Structural and electronic properties of Si-and Sn-doped (− 201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres
MJ Tadjer, JA Freitas, JC Culbertson, MH Weber, ER Glaser, AL Mock, ...
Journal of Physics D: Applied Physics 53 (50), 504002, 2020
222020
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ...
Journal of Applied Physics 128 (8), 2020
222020
Effect of surface morphology on diode performance in vertical GaN Schottky diodes
JK Hite, TJ Anderson, MA Mastro, LE Luna, JC Gallagher, RL Myers-Ward, ...
ECS Journal of Solid State Science and Technology 6 (11), S3103, 2017
222017
Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ...
Applied Physics Letters 117 (8), 2020
182020
Demonstration of CuI as a P–N heterojunction to β-Ga2O3
JC Gallagher, AD Koehler, MJ Tadjer, NA Mahadik, TJ Anderson, ...
Applied Physics Express 12 (10), 104005, 2019
182019
Effect of surface passivation and substrate on proton irradiated AlGaN/GaN HEMT transport properties
JC Gallagher, TJ Anderson, AD Koehler, NA Mahadik, A Nath, BD Weaver, ...
ECS Journal of Solid State Science and Technology 6 (11), S3060, 2017
162017
Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices
H Ahmad, TJ Anderson, JC Gallagher, EA Clinton, Z Engel, CM Matthews, ...
Journal of Applied Physics 127 (21), 2020
152020
A simple edge termination design for vertical GaN PN diodes
P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ...
IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022
142022
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