Luis Gaggero

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Miguel Eduardo Mora-RamosCentro de Investigación en Ciencias. Universidad Autónoma del Estado de Morelos. Cuernavaca, MéxicoVerified email at uaem.mx
Outmane OubramUniversidad Autónoma del Estado de MorelosVerified email at uaem.mx
Rolando Perez AlvarezCentro de Investigación en Ciencias, Universidad Autónoma del Estado de Morelos (UAEM), MéxicoVerified email at uaem.mx
D. S. Diaz-GuerreroUniversidad Nacional Autónoma de MéxicoVerified email at ibt.unam.mx
J. C. Martínez-OrozcoUniversidad Autónoma de ZacatecasVerified email at uaz.edu.mx
Vivechana AgarwalProfessor of Material Science, Autonomous State University of Morelos, Cuernavaca, MexicoVerified email at uaem.mx
Gerardo NaumisInstituto de Fisica, UNAM, MexicoVerified email at fisica.unam.mx
Humberto Noverola GamasProfessor of Physics, Universidad Juárez Autónoma de TabascoVerified email at ujat.mx
D. Ariza-FloresUAZVerified email at uaz.edu.mx
Rogelio Rodríguez-GonzálezUniversidad Autónoma de ZacatecasVerified email at uaz.edu.mx
O NavarroInstituto de Investigaciones en Materiales, Universidad Nacional Autónoma de MéxicoVerified email at unam.mx
Jean-Claude M'PekoProfessor do Instituto de Física de São Carlos (IFSC), Universidade de São Paulo (USP)Verified email at ifsc.usp.br
Carlos DuqueInstituto de Física, Universidad de AntioquiaVerified email at fisica.udea.edu.co
Heraclio García-CervantesLecturer-Researcher, Universidad Tecnológica de LeónVerified email at utleon.edu.mx
J. Escorcia-GarcíaCONACYT-CINVESTAVVerified email at cinvestav.edu.mx
Ali BassamUniversidad Autónoma de YucatánVerified email at correo.uady.mx
Mauricio TerronesEvan Pugh University Professor (Physics), Penn StateVerified email at psu.edu
Humberto TerronesRayleigh Endowed Chair Professor of Physics, Rensselaer Polytechnic InstituteVerified email at rpi.edu
Oscar Sotolongo-GrauACE Alzheimer Center Barcelona, Barcelona, SpainVerified email at fundacioace.org
Ernesto Jiménez VillarProfessor of Physics Department; Universidade Federal da Paraíba (UFPB)Verified email at uv.es

Luis Gaggero

Director, Facultad de Ciencias, UAEM

Verified email at uaem.mx


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A simple model for delta‐doped field‐effect transistor electronic states LM Gaggero‐Sager, R Pérez‐Alvarez Journal of applied physics 78 (7), 4566-4569, 1995	66	1995
Thomas-Fermi approximation in p-type δ-doped quantum wells of GaAs and Si LM Gaggero-Sager, ME Mora-Ramos, DA Contreras-Solorio Physical Review B 57 (11), 6286, 1998	52	1998
Design of graphene electronic devices using nanoribbons of different widths GG Naumis, M Terrones, H Terrones, LM Gaggero-Sager Applied Physics Letters 95 (18), 2009	50	2009
Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells I Rodriguez-Vargas, LM Gaggero-Sager, VR Velasco Surface science 537 (1-3), 75-83, 2003	41	2003
The hydrostatic pressure effects on intersubband optical absorption of n-type δ-doped quantum well in GaAs O Oubram, O Navarro, LM Gaggero-Sager, JC Martínez-Orozco, ... Solid state sciences 14 (4), 440-444, 2012	34	2012
The spectrum of quasiregular heterostructures R Pérez-Alvarez, F Garcıa-Moliner Some Contemporary Problems of Condensed Matter Physics, 1-37, 2001	34*	2001
Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems O Oubram, ME Mora-Ramos, LM Gaggero-Sager The European Physical Journal B 71, 233-236, 2009	33	2009
Subband and transport calculations in double n-type δ-doped quantum wells in Si I Rodriguez-Vargas, LM Gaggero-Sager Journal of applied physics 99 (3), 2006	31	2006
Self-similar conductance patterns in graphene Cantor-like structures H García-Cervantes, LM Gaggero-Sager, DS Díaz-Guerrero, ... Scientific Reports 7 (1), 617, 2017	30	2017
Electrical properties of Nb-doped PZT 65/35 ceramics: Influence of Nb and excess PbO JC M’Peko, AG Peixoto, E Jiménez, LM Gaggero-Sager Journal of electroceramics 15, 167-176, 2005	30	2005
Thomas-Fermi approximation in a tight-binding calculation of δ-doped quantum wells in GaAs S Vlaev, LM Gaggero-Sager Physical Review B 58 (3), 1142, 1998	27	1998
Study of the electronic properties of GaAs‐based atomic layer doped field effect transistor (ALD‐FET) under the influence of hydrostatic pressure JC Martínez‐Orozco, I Rodríguez‐Vargas, CA Duque, ME Mora‐Ramos, ... physica status solidi (b) 246 (3), 581-585, 2009	24	2009
White metal-like omnidirectional mirror from porous silicon dielectric multilayers AD Ariza-Flores, LM Gaggero-Sager, V Agarwal Applied Physics Letters 101 (3), 2012	21	2012
Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells LM Gaggero-Sager Modelling and Simulation in Materials Science and Engineering 9 (1), 1, 2001	21	2001
Electronic structure of delta-doped quantum well as a function of temperature LM Gaggero-Sager, R Pérez-Alvarez Applied physics letters 70 (2), 212-213, 1997	21	1997
Exchange Energy of a Hole Gas and the Thomas‐Fermi‐Dirac Approximation in p‐Type δ‐Doped Quantum Wells in Si and GaAs LM Gaggero‐Sager physica status solidi (b) 231 (1), 243-255, 2002	20	2002
Self-similar charge transmission in gapped graphene DS Díaz-Guerrero, I Rodríguez-Vargas, GG Naumis, LM Gaggero-Sager Fractals 24 (02), 1630002, 2016	18	2016
Self-consistent calculation of transport properties in Si δ-doped GaAs quantum wells as a function of the temperature LM Gaggero-Sager, GG Naumis, MA Muñoz-Hernandez, V Montiel-Palma Physica B: Condensed Matter 405 (20), 4267-4270, 2010	18	2010
Exchange and correlation in the Thomas–Fermi approximation LM Gaggero‐Sager Journal of mathematical chemistry 25 (2), 317-320, 1999	18	1999
Self-similar transmission properties of aperiodic cantor potentials in gapped graphene R Rodríguez-González, I Rodríguez-Vargas, DS Díaz-Guerrero, ... The European Physical Journal B 89, 1-11, 2016	17	2016

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