Antonio Cassinese
Antonio Cassinese
Dipartimento di Fisica Università Napoli Federico II
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Combined experimental and theoretical investigation of optical, structural, and electronic properties of C H 3 N H 3 Sn X 3 thin films (X= Cl, Br)
F Chiarella, A Zappettini, F Licci, I Borriello, G Cantele, D Ninno, ...
Physical Review B 77 (4), 045129, 2008
Microfluidics analysis of red blood cell membrane viscoelasticity
G Tomaiuolo, M Barra, V Preziosi, A Cassinese, B Rotoli, S Guido
Lab on a Chip 11 (3), 449-454, 2011
Temperature dependence of the penetration depth in Nd 1.85 Ce 0.15 CuO 4− δ superconducting thin films
A Andreone, A Cassinese, A Di Chiara, R Vaglio, A Gupta, E Sarnelli
Physical Review B 49 (9), 6392, 1994
Electrical transport properties characterization of PVK (poly N-vinylcarbazole) for electroluminescent devices applications
P D’Angelo, M Barra, A Cassinese, MG Maglione, P Vacca, C Minarini, ...
Solid-state electronics 51 (1), 123-129, 2007
Stem cell-compatible eumelanin biointerface fabricated by chemically controlled solid state polymerization
A Pezzella, M Barra, A Musto, A Navarra, M Alfe, P Manini, S Parisi, ...
Materials Horizons 2 (2), 212-220, 2015
Transport property and charge trap comparison for N-channel perylene diimide transistors with different air-stability
M Barra, FVD Girolamo, F Chiarella, M Salluzzo, Z Chen, A Facchetti, ...
The Journal of Physical Chemistry C 114 (48), 20387-20393, 2010
Microconfined flow behavior of red blood cells
G Tomaiuolo, L Lanotte, R D'Apolito, A Cassinese, S Guido
Medical engineering & physics 38 (1), 11-16, 2016
Matrix-assisted pulsed laser evaporation of polythiophene films
F Bloisi, A Cassinese, R Papa, L Vicari, V Califano
Thin Solid Films 516 (7), 1594-1598, 2008
Perylene diimides functionalized with N-thiadiazole substituents: Synthesis and electronic properties in OFET devices
R Centore, L Ricciotti, A Carella, A Roviello, M Causà, M Barra, F Ciccullo, ...
Organic Electronics 13 (10), 2083-2093, 2012
YBa2Cu3O7 microwave resonators for strong collective coupling with spin ensembles
A Ghirri, C Bonizzoni, D Gerace, S Sanna, A Cassinese, M Affronte
Applied Physics Letters 106 (18), 184101, 2015
Field-effect tuning of carrier density in thin films
A Cassinese, GM De Luca, A Prigiobbo, M Salluzzo, R Vaglio
Applied physics letters 84 (19), 3933-3935, 2004
Very low bias stress in n-type organic single-crystal transistors
M Barra, FV Di Girolamo, NA Minder, I Gutiérrez Lezama, Z Chen, ...
Applied Physics Letters 100 (13), 79, 2012
Relation between normal-state and superconductive properties of niobium sputtered films
A Andreone, A Cassinese, M Iavarone, R Vaglio, II Kulik, V Palmieri
Physical Review B 52 (6), 4473, 1995
Organic film thickness influence on the bias stress instability in sexithiophene field effect transistors
FV Di Girolamo, C Aruta, M Barra, P D’angelo, A Cassinese
Applied Physics A 96 (2), 481-487, 2009
Transport properties of ZrN superconducting films
A Cassinese, M Iavarone, R Vaglio, M Grimsditch, S Uran
Physical Review B 62 (21), 13915, 2000
Investigation on bias stress effects in n-type PDI8-CN2 thin-film transistors
FV Di Girolamo, F Ciccullo, M Barra, A Carella, A Cassinese
Organic Electronics 13 (11), 2281-2289, 2012
Coherently coupling distinct spin ensembles through a high- superconducting resonator
A Ghirri, C Bonizzoni, F Troiani, N Buccheri, L Beverina, A Cassinese, ...
Physical Review A 93 (6), 063855, 2016
Regioregular poly [3‐(4‐alkoxyphenyl) thiophene] s
A Roviello, A Buono, A Carella, G Roviello, A Cassinese, M Barra, ...
Journal of Polymer Science Part A: Polymer Chemistry 45 (9), 1758-1770, 2007
Contact-resistance effects in PDI8-CN2 n-type thin-film transistors investigated by Kelvin-probe potentiometry
F Chiarella, M Barra, A Carella, L Parlato, E Sarnelli, A Cassinese
Organic Electronics 28, 299-305, 2016
Nonlinear microwave properties of sputtered superconducting films
A Andreone, A Cassinese, A Di Chiara, M Iavarone, F Palomba, A Ruosi, ...
Journal of applied physics 82 (4), 1736-1742, 1997
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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