| The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN D Zanato, S Gokden, N Balkan, BK Ridley, WJ Schaff Semiconductor science and technology 19 (3), 427, 2004 | 199 | 2004 |
| Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures R Tülek, A Ilgaz, S Gökden, A Teke, MK Öztürk, M Kasap, S Özçelik, ... Journal of Applied Physics 105 (1), 2009 | 116 | 2009 |
| The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ... New Journal of Physics 11 (6), 063031, 2009 | 89 | 2009 |
| Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0. 25Ga0. 75N/GaN heterostructures SB Lisesivdin, S Acar, M Kasap, S Ozcelik, S Gokden, E Ozbay Semiconductor science and Technology 22 (5), 543, 2007 | 75 | 2007 |
| Energy and momentum relaxation of hot electrons in GaN/AlGaN N Balkan, MC Arikan, S Gokden, V Tilak, B Schaff, RJ Shealy Journal of Physics: Condensed Matter 14 (13), 3457, 2002 | 66 | 2002 |
| The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure S Gökden, R Baran, N Balkan, S Mazzucato Physica E: Low-dimensional Systems and Nanostructures 24 (3-4), 249-256, 2004 | 43 | 2004 |
| Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel S Gökden, R Tülek, A Teke, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ... Semiconductor science and technology 25 (4), 045024, 2010 | 41 | 2010 |
| Mobility of two‐dimensional electrons in an AlGaN/GaN modulation‐doped heterostructure S Gökden physica status solidi (a) 200 (2), 369-377, 2003 | 40 | 2003 |
| Effect of non-drifting hot phonons on high-field drift velocity in GaN/AlGaN S Gokden, N Balkan, BK Ridley Semiconductor science and technology 18 (4), 206, 2003 | 23 | 2003 |
| Momentum relaxation of electrons in n-type bulk GaN D Zanato, S Gokden, N Balkan, BK Ridley, WJ Schaff Superlattices and microstructures 34 (1-2), 77-85, 2003 | 20 | 2003 |
| The effect of electrons and phonons scattering from interface roughness and well-width fluctuations on low-field mobility of 2DEG in GaN/AlGaN S Gökden Physica E: Low-dimensional Systems and Nanostructures 23 (1-2), 114-120, 2004 | 14 | 2004 |
| Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures S Gökden Physica E: Low-dimensional Systems and Nanostructures 23 (1-2), 19-25, 2004 | 14 | 2004 |
| The effect of scattering mechanisms on the low field mobility in GaN/AlGaN heterostructures S Gökden, A Ilgaz, N Balkan, S Mazzucato Physica E: Low-dimensional Systems and Nanostructures 25 (1), 86-92, 2004 | 12 | 2004 |
| The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure R Tülek, E Arslan, A Bayraklı, S Turhan, S Gökden, Ö Duygulu, AA Kaya, ... Thin Solid Films 551, 146-152, 2014 | 11 | 2014 |
| Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates A Ilgaz, S Gökden, R Tülek, A Teke, S Özçelik, E Özbay The European Physical Journal-Applied Physics 55 (3), 30102, 2011 | 10 | 2011 |
| Morphological and optical characterizations of different ZnO nanostructures grown by mist-CVD P Narin, E Kutlu-Narin, S Kayral, R Tulek, S Gokden, A Teke, ... Journal of Luminescence 251, 119158, 2022 | 8 | 2022 |
| Current-transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures E Arslan, S Turan, S Gökden, A Teke, E Özbay Thin Solid Films 548, 411-418, 2013 | 8 | 2013 |
| The effect of hot phonons on the drift velocity in GaN/AlGaN two dimensional electron gas S Gökden Physica E: Low-dimensional Systems and Nanostructures 23 (1-2), 198-203, 2004 | 8 | 2004 |
| J. Phys.: Condens. Matter N Balkan, MC Arikan, S Gokten, V Tilak, B Schaff J. Phys.: Condens. Matter 14 (3457), 2002 | 5* | 2002 |
| Electron transport mechanism in GaN/AlGaN HEMT structures S Gökden Turkish Journal of Physics 27 (3), 205-210, 2003 | 4 | 2003 |
Ekmel OzbayProfessor, Bilkent University, Ankara, TURKEYEmail verificata su bilkent.edu.tr
