Carl Asplund
Carl Asplund
IRnova AB
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Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning
S Mogg, N Chitica, U Christiansson, R Schatz, P Sundgren, C Asplund, ...
IEEE Journal of Quantum Electronics 40 (5), 453-462, 2004
Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors
L Höglund, C Asplund, Q Wang, S Almqvist, H Malm, E Petrini, ...
Applied physics letters 88 (21), 213510, 2006
1260 nm InGaAs vertical-cavity lasers
C Asplund, P Sundgren, S Mogg, M Hammar, U Christiansson, ...
Electronics Letters 38 (13), 635-636, 2002
Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice
L Largeau, C Bondoux, G Patriarche, C Asplund, A Fujioka, ...
Applied Physics Letters 79 (12), 1795-1797, 2001
Manufacturability of type-II InAs/GaSb superlattice detectors for infrared imaging
L Höglund, C Asplund, RM von Würtemberg, H Kataria, A Gamfeldt, ...
Infrared Physics & Technology 84, 28-32, 2017
Doping-induced losses in AlAs/GaAs distributed Bragg reflectors
C Asplund, S Mogg, G Plaine, F Salomonsson, N Chitica, M Hammar
Journal of Applied Physics 90 (2), 794-800, 2001
Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy
L Höglund, E Petrini, C Asplund, H Malm, JY Andersson, PO Holtz
Applied surface science 252 (15), 5525-5529, 2006
The nature of optical transitions in Ga0. 64In0. 36As1− xNx/GaAs single quantum wells with low nitrogen content (x≤ 0.008)
R Kudrawiec, G Sęk, K Ryczko, J Misiewicz, P Sundgren, C Asplund, ...
Solid state communications 127 (9-10), 613-618, 2003
Performance of mid-wave T2SL detectors with heterojunction barriers
C Asplund, RM von Würtemberg, D Lantz, H Malm, H Martijn, E Plis, ...
Infrared Physics & Technology 59, 22-27, 2013
A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure
L Ouattara, A Mikkelsen, E Lundgren, L Höglund, C Asplund, ...
Journal of applied physics 100 (4), 044320, 2006
Low-threshold, high-temperature operation of 1.2/spl mu/m InGaAs vertical cavity lasers
F Salomonsson, C Asplund, P Sundgren, G Plaine, S Mogg, M Hammar
Electronics Letters 37 (15), 957-958, 2001
Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures
O Gustafsson, A Karim, J Berggren, Q Wang, C Reuterskiöld-Hedlund, ...
Optics express 20 (19), 21264-21271, 2012
Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-µm GaInNAs/GaAs single quantum well lasers
GY Plaine, C Asplund, P Sundgren, S Mogg, M Hammar
Japanese journal of applied physics 41 (2S), 1040, 2002
Far-IR linear detector array for DARWIN
H Martijn, A Gromov, S Smuk, H Malm, C Asplund, J Borglind, ...
Infrared physics & technology 47 (1-2), 106-114, 2005
Energy level scheme of quantum-dots-in-a-well infrared photodetector structures
L Höglund, KF Karlsson, PO Holtz, H Pettersson, ME Pistol, Q Wang, ...
Physical Review B 82 (3), 035314, 2010
Energy level scheme of quantum-dots-in-a-well infrared photodetector structures
L Höglund, KF Karlsson, PO Holtz, H Pettersson, ME Pistol, Q Wang, ...
Physical Review B 82 (3), 035314, 2010
QWIPs at IRnova, a status update
H Martijn, A Gamfeldt, C Asplund, S Smuk, H Kataria, E Costard
Infrared Technology and Applications XLII 9819, 981918, 2016
High image quality type-II superlattice detector for 3.3 μm detection of volatile organic compounds
H Malm, A Gamfeldt, RM von Würtemberg, D Lantz, C Asplund, H Martijn
Infrared Physics & Technology 70, 34-39, 2015
Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection
L Höglund, PO Holtz, L Ouattara, C Asplund, Q Wang, S Almqvist, ...
Optical Materials in Defence Systems Technology III 6401, 640109, 2006
Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy
P Sundgren, C Asplund, K Baskar, M Hammar
Applied physics letters 82 (15), 2431-2433, 2003
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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