| 2-D numerical simulation of high performance amorphous In-Ga-Zn-O TFTs for flat panel displays T Fung, CS Chuang, C Chen, K Abe, H Kumomi, J Kanicki AM-FPD 8, 251-252, 2008 | 619 | 2008 |
| Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors FR Libsch, J Kanicki Applied Physics Letters 62 (11), 1286-1288, 1993 | 521 | 1993 |
| Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays Y He, R Hattori, J Kanicki IEEE Electron Device Letters 21 (12), 590-592, 2000 | 352 | 2000 |
| Thin-film organic polymer phototransistors MC Hamilton, S Martin, J Kanicki IEEE Transactions on Electron Devices 51 (6), 877-885, 2004 | 263 | 2004 |
| Amorphous and Microcrystalline Semiconductor Devices: Materials and Device Physics J Kanicki Artech House Materials Science, 1992 | 235* | 1992 |
| Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II. WL Warren, J Kanicki, FC Rong, EH Poindexter Journal of the Electrochemical Society 139 (3), 880, 1992 | 232 | 1992 |
| Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors TC Fung, CS Chuang, C Chen, K Abe, R Cottle, M Townsend, H Kumomi, ... Journal of Applied Physics 106 (8), 084511, 2009 | 229 | 2009 |
| Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study DT Krick, PM Lenahan, J Kanicki Journal of applied physics 64 (7), 3558-3563, 1988 | 209 | 1988 |
| Density of states of a-InGaZnO from temperature-dependent field-effect studies C Chen, K Abe, H Kumomi, J Kanicki IEEE Transactions on Electron Devices 56 (6), 1177-1183, 2009 | 164 | 2009 |
| Performance of thin hydrogenated amorphous silicon thin‐film transistors J Kanicki, FR Libsch, J Griffith, R Polastre Journal of Applied Physics 69 (4), 2339-2345, 1991 | 164 | 1991 |
| Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors N Lustig, J Kanicki Journal of Applied Physics 65 (10), 3951-3957, 1989 | 159 | 1989 |
| High performance organic polymer light-emitting heterostructure devices Y He, S Gong, R Hattori, J Kanicki Applied physics letters 74 (16), 2265-2267, 1999 | 158 | 1999 |
| Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays C Chiang, J Kanicki, K Takechi Japanese Journal of Applied Physics 37 (9R), 4704, 1998 | 145 | 1998 |
| Improved a-Si: H TFT pixel electrode circuits for active-matrix organic light emitting displays Y He, R Hattori, J Kanicki IEEE Transactions on Electron Devices 48 (7), 1322-1325, 2001 | 135 | 2001 |
| High-efficiency organic polymer light-emitting heterostructure devices on flexible plastic substrates Y He, J Kanicki Applied Physics Letters 76 (6), 661-663, 2000 | 135 | 2000 |
| Amorphous silicon thin-film transistors based active-matrix organic light-emitting displays J Kanicki, JH Kim, J Nahm, Y He, R Hattori Asia Display: International Display Workshops, 315-318, 2001 | 134 | 2001 |
| Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films WL Warren, J Kanicki, J Robertson, EH Poindexter, PJ McWhorter Journal of applied physics 74 (6), 4034-4046, 1993 | 125 | 1993 |
| Structural ordering and enhanced carrier mobility in organic polymer thin film transistors L Kinder, J Kanicki, P Petroff Synthetic Metals 146 (2), 181-185, 2004 | 123 | 2004 |
| Electrical instability of RF sputter amorphous In-Ga-Zn-O thin-film transistors TC Fung, K Abe, H Kumomi, J Kanicki Journal of Display Technology 5 (12), 452-461, 2009 | 114 | 2009 |
| Four-thin film transistor pixel electrode circuits for active-matrix organic light-emitting displays Y He, R Hattori, J Kanicki Japanese Journal of Applied Physics 40 (3R), 1199, 2001 | 99 | 2001 |
Hojin LeeSoongsil UniversityEmail verificata su ssu.ac.kr
