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Nature communications 8 (1), 1-8, 2017
238 2017 Voltage‐impulse‐induced non‐volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices M Liu, BM Howe, L Grazulis, K Mahalingam, T Nan, NX Sun, GJ Brown
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Scientific reports 4 (1), 1-6, 2014
197 2014 Voltage tuning of ferromagnetic resonance with bistable magnetization switching in energy‐efficient magnetoelectric composites M Liu, Z Zhou, T Nan, BM Howe, GJ Brown, NX Sun
Advanced Materials 25 (10), 1435-1439, 2013
188 2013 Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications Y Wei, A Gin, M Razeghi, GJ Brown
Applied physics letters 80 (18), 3262-3264, 2002
188 2002 Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm Y Wei, A Gin, M Razeghi, GJ Brown
Applied Physics Letters 81 (19), 3675-3677, 2002
186 2002 Comparison of spin-orbit torques and spin pumping across NiFe/Pt and NiFe/Cu/Pt interfaces T Nan, S Emori, CT Boone, X Wang, TM Oxholm, JG Jones, BM Howe, ...
Physical Review B 91 (21), 214416, 2015
177 2015 Effect of interfaces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelope-function approximation F Szmulowicz, H Haugan, GJ Brown
Physical Review B 69 (15), 155321, 2004
135 2004 High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range H Mohseni, M Razeghi, GJ Brown, YS Park
Applied physics letters 78 (15), 2107-2109, 2001
125 2001 Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range H Mohseni, E Michel, J Sandoen, M Razeghi, W Mitchel, G Brown
Applied physics letters 71 (10), 1403-1405, 1997
122 1997 Demonstration of a 256× 256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors J Jiang, K Mi, S Tsao, W Zhang, H Lim, T O’sullivan, T Sills, M Razeghi, ...
Applied physics letters 84 (13), 2232-2234, 2004
111 2004 High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition J Jiang, S Tsao, T O’sullivan, W Zhang, H Lim, T Sills, K Mi, M Razeghi, ...
Applied physics letters 84 (12), 2166-2168, 2004
110 2004 On the performance and surface passivation of type II superlattice photodiodes for the very-long-wavelength infrared A Hood, M Razeghi, EH Aifer, GJ Brown
Applied Physics Letters 87 (15), 151113, 2005
108 2005 Fabrication of indium bumps for hybrid infrared focal plane array applications J Jiang, S Tsao, T O’Sullivan, M Razeghi, GJ Brown
Infrared Physics & Technology 45 (2), 143-151, 2004
103 2004 Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes BM Nguyen, M Razeghi, V Nathan, GJ Brown
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Journal of crystal growth 261 (4), 471-478, 2004
97 2004 Calculation and photoresponse measurement of the bound-to-continuum infrared absorption in p-type GaAs/Al x Ga 1− x As quantum wells F Szmulowicz, GJ Brown
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Nature communications 6 (1), 1-7, 2015
93 2015 Electronic transport in a controllably grown carbon nanotube-silicon heterojunction array M Tzolov, B Chang, A Yin, D Straus, JM Xu, G Brown
Physical Review Letters 92 (7), 075505, 2004
93 2004 Band gap tuning of type-II superlattices for mid-infrared detection HJ Haugan, F Szmulowicz, GJ Brown, K Mahalingam
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87 2004