Jheng-Sin Liu
Jheng-Sin Liu
Email verificata su vt.edu
Titolo
Citata da
Citata da
Anno
An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultralow-Voltage Applications
JS Liu, MB Clavel, MK Hudait
IEEE Transactions on Electron Devices 64 (5), 2193 - 2200, 2017
232017
Heterointerface engineering of broken-gap InAs/GaSb multilayer structures
JS Liu, Y Zhu, PS Goley, MK Hudait
ACS applied materials & interfaces 7 (4), 2512-2517, 2015
232015
Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs1-ySby with Tunable Antimony Composition
JS Liu, MB Clavel, MK Hudait
ACS applied materials & interfaces 7 (51), pp 28624–28631, 2015
172015
Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer
P Nguyen, M Clavel, P Goley, J Liu, N Allen, L Guido, M Hudait
IEEE Journal of the electron devices society 3 (4), 341-348, 2015
122015
Performance Evaluation of Novel Strain-Engineered Ge-InGaAs Heterojunction Tunnel Field-Effect Transistors
JS Liu, MB Clavel, MK Hudait
IEEE Transactions on Electron Devices 62 (10), 3223 - 3228, 2015
112015
Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy
Jheng-Sin Liu, Michael B. Clavel, Rahul Pandey, Suman Datta, Michael Meeker ...
Journal of Applied Physics 119 (24), 244308, 2016
102016
A highly scalable interface fuse for advanced CMOS logic technologies
LY Yang, MC Hsieh, JS Liu, YW Chin, CJ Lin
IEEE electron device letters 33 (2), 245-247, 2011
92011
TBAL: tunnel FET-based adiabatic logic for energy-efficient, ultra-low voltage IoT applications
JS Liu, MB Clavel, MK Hudait
IEEE Journal of the Electron Devices Society 7, 210-218, 2019
52019
Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium
MK Hudait, M Clavel, JS Liu, A Ghosh, N Jain, RJ Bodnar
ACS applied materials & interfaces 9 (49), 43315-43324, 2017
32017
Investigating FinFET sidewall passivation using epitaxial (100) Ge and (110) Ge metal–oxide–semiconductor devices on AlAs/GaAs
PD Nguyen, MB Clavel, JS Liu, MK Hudait
IEEE Transactions on Electron Devices 64 (11), 4457-4465, 2017
32017
In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process
MK Hudait, MB Clavel, JS Liu, S Bhattacharya
ACS omega 3 (11), 14567-14574, 2018
22018
Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials
MK Hudait, MB Clavel, S Saluru, JS Liu, MA Meeker, GA Khodaparast, ...
AIP Advances 8 (11), 115119, 2018
12018
Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer
JS Liu, M Clavel, R Pandey, S Datta, Y Xie, JJ Heremans, MK Hudait
AIP Advances 8 (10), 105108, 2018
12018
Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs (001) heterostructures
MB Clavel, JS Liu, MA Meeker, GA Khodaparast, Y Xie, JJ Heremans, ...
Journal of Applied Physics 127 (7), 075702, 2020
2020
Advanced Energy-Efficient Devices for Ultra-Low Voltage System: Materials-to-Circuits
JS Liu
Virginia Tech, 2018
2018
Performance Analysis of TaSiOx Inspired Sub-10 nm Energy Efficient In₀. ₅₃Ga₀. ₄₇As Quantum Well Tri-Gate Technology
SK Saluru, JS Liu, MK Hudait
IEEE, 2017
2017
Performance Analysis of TaSiOx Inspired Sub-10 nm Energy Efficient In0.53Ga0.47As Quantum Well Tri-Gate Technology
SK Saluru, JS Liu, MK Hudait
IEEE Journal of the Electron Devices Society 5 (6), 496-503, 2017
2017
N 型矽晶圓太陽能電池三維模擬
JS Liu
臺灣大學光電工程學研究所學位論文, 1-75, 2013
2013
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
Articoli 1–18