β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
235 2022 Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
123 2019 RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
51 2020 Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ...
Applied Physics Express 12 (12), 126501, 2019
46 2019 Pulsed Power Performance of β -Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
38 2020 Toward high voltage radio frequency devices in β-Ga2O3 N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ...
Applied Physics Letters 117 (24), 2020
30 2020 Accurate nonlinear GaN HEMT simulations from X-to Ka-band using a single ASM-HEMT model NC Miller, NA Moser, RC Fitch, JK Gillespie, KJ Liddy, DE Walker, ...
2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON …, 2021
14 2021 500° C operation of β-Ga2O3 field-effect transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, DM Dryden, J Williams, H Lee, ...
Applied Physics Letters 121 (24), 2022
12 2022 Scaled T-Gate β -Ga2 O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit DM Dryden, KJ Liddy, AE Islam, JC Williams, DE Walker, NS Hendricks, ...
IEEE Electron Device Letters 43 (8), 1307-1310, 2022
12 2022 Thermally-Aware Layout Design of β -Ga₂O₃ Lateral MOSFETs SH Kim, D Shoemaker, B Chatterjee, AJ Green, KD Chabak, ER Heller, ...
IEEE Transactions on Electron Devices 69 (3), 1251-1257, 2022
12 2022 Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown NS Hendricks, E Farzana, AE Islam, KD Leedy, KJ Liddy, J Williams, ...
Applied Physics Express 16 (7), 071002, 2023
10 2023 Accurate non-linear harmonic simulations at X-band using the ASM-HEMT model validated with NVNA measurements NC Miller, DT Davis, S Khandelwal, F Sischka, R Gilbert, M Elliott, ...
2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and …, 2022
10 2022 Defect Engineering at the Al2 O3 /(010) β -Ga2 O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals AE Islam, C Zhang, K DeLello, DA Muller, KD Leedy, S Ganguli, ...
IEEE Transactions on Electron Devices 69 (10), 5656-5663, 2022
7 2022 Hysteresis-free MOSCAP made with Al2 O3 /(010)β-Ga2 O3 interface using a combination of surface cleaning, etching and post-deposition annealing AE Islam, KD Leedy, NA Moser, S Ganguli, KJ Liddy, AJ Green, ...
2021 Device Research Conference (DRC), 1-2, 2021
7 2021 Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Double-Side Diamond Cooling Approach SH Kim, D Shoemaker, AJ Green, KD Chabak, KJ Liddy, S Graham, ...
IEEE Transactions on Electron Devices 70 (4), 1628-1635, 2023
6 2023 Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes NS Hendricks, AE Islam, EA Sowers, J Williams, DM Dryden, KJ Liddy, ...
Journal of Applied Physics 135 (9), 2024
2 2024 Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With 140-nm Gate Length AE Islam, NP Sepelak, AT Miesle, H Lee, M Snure, S Nikodemski, ...
IEEE Transactions on Electron Devices, 2024
2 2024 First Demonstration of 500 °C Operation of β-Ga2 O3 MOSFET in Air NP Sepelak, J Williams, DM Dryden, R Kahler, KJ Liddy, W Wang, ...
2022 Compound Semiconductor Week (CSW), 1-2, 2022
2 2022 Self-Aligned Gate Thin-Channel β-Ga2 O3 MOSFETs KJ Liddy, NS Hendricks, AJ Green, A Popp, MT Lindquist, KD Leedy, ...
2019 Device Research Conference (DRC), 219-220, 2019
2 2019 High temperature operation of beta-Ga 2 O 3 transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, J Williams, DM Dryden, ...
IMAPSource Proc. 2022, 000059-000062, 2023
1 2023