prof. Andrea Irace
Citata da
Citata da
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs
G Romano, A Fayyaz, M Riccio, L Maresca, G Breglio, A Castellazzi, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 978-987, 2016
An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide
A Cutolo, M Iodice, A Irace, P Spirito, L Zeni
Applied physics letters 71 (2), 199-201, 1997
All-silicon optical temperature sensor based on Multi-Mode Interference
A Irace, G Breglio
Optics express 11 (22), 2807-2812, 2003
SiC power MOSFETs performance, robustness and technology maturity
A Castellazzi, A Fayyaz, G Romano, L Yang, M Riccio, A Irace
Microelectronics Reliability 58, 164-176, 2016
Measurement of thermal conductivity and diffusivity of single and multilayer membranes
A Irace, PM Sarro
Sensors and Actuators A: Physical 76 (1-3), 323-328, 1999
Short-circuit failure mechanism of SiC power MOSFETs
G Romano, L Maresca, M Riccio, V d'Alessandro, G Breglio, A Irace, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC'sá…, 2015
Experimental detection and numerical validation of different failure mechanisms in IGBTs during unclamped inductive switching
G Breglio, A Irace, E Napoli, M Riccio, P Spirito
IEEE Transactions on Electron Devices 60 (2), 563-570, 2012
Short-circuit robustness of SiC power MOSFETs: Experimental analysis
A Castellazzi, A Fayyaz, L Yang, M Riccio, A Irace
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC'sá…, 2014
All-silicon optoelectronic modulator with 1 GHz switching capability
A Irace, G Breglio, A Cutolo
Electronics Letters 39 (2), 232-233, 2003
Experimental analysis of electro-thermal instability in SiC Power MOSFETs
M Riccio, A Castellazzi, G De Falco, A Irace
Microelectronics Reliability 53 (9-11), 1739-1744, 2013
Fiber optic humidity sensors for high-energy physics applications at CERN
M Consales, A Buosciolo, A Cutolo, G Breglio, A Irace, S Buontempo, ...
Sensors and Actuators B: Chemical 159 (1), 66-74, 2011
Fast silicon-on-silicon optoelectronic router based on a BMFET device
A Irace, G Coppola, G Breglio, A Cutolo
IEEE Journal of Selected Topics in Quantum Electronics 6 (1), 14-18, 2000
Circuit-based electrothermal simulation of power devices by an ultrafast nonlinear MOR approach
L Codecasa, V d’Alessandro, A Magnani, A Irace
IEEE Transactions on Power Electronics 31 (8), 5906-5916, 2015
SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs
V d'Alessandro, A Magnani, M Riccio, G Breglio, A Irace, N Rinaldi, ...
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC'sá…, 2014
A novel wireless self-powered microcontroller-based monitoring circuit for photovoltaic panels in grid-connected systems
M Gargiulo, P Guerriero, S Daliento, A Irace, V d'Alessandro, M Crisci, ...
SPEEDAM 2010, 164-168, 2010
Electro-thermal instability in multi-cellular Trench-IGBTs in avalanche condition: Experiments and simulations
M Riccio, A Irace, G Breglio, P Spirito, E Napoli, Y Mizuno
2011 IEEE 23rd International Symposium on Power Semiconductor Devices andá…, 2011
Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation
A Irace, G Breglio, P Spirito, R Letor, S Russo
Microelectronics Reliability 45 (9-11), 1706-1710, 2005
50W X-band GaN MMIC HPA: Effective power capability and transient thermal analysis
C Costrini, A Cetronio, P Romanini, G Breglio, A Irace, M Riccio
The 40th European Microwave Conference, 1650-1653, 2010
Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography
M Riccio, L Rossi, A Irace, E Napoli, G Breglio, P Spirito, R Tagami, ...
Microelectronics Reliability 50 (9-11), 1725-1730, 2010
Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg miror
G Coppola, A Irace, M Iodice, A Cutolo
Optical Engineering 40 (6), 1076-1081, 2001
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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