Helge Weman
TitoloCitata daAnno
Nanowire device having graphene top and bottom electrodes and method of making such a device
H Weman, BO FIMLAND, DC Kim
US Patent 10,243,104, 2019
2352019
Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth
AM Munshi, DL Dheeraj, VT Fauske, DC Kim, ATJ van Helvoort, ...
Nano letters 12 (9), 4570-4576, 2012
1722012
Serpentine superlattice quantum-wire arrays of (Al, Ga) As grown on vicinal GaAs substrates
MS Miller, H Weman, CE Pryor, M Krishnamurthy, PM Petroff, H Kroemer, ...
Physical review letters 68 (23), 3464, 1992
1511992
Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires
TB Hoang, AF Moses, HL Zhou, DL Dheeraj, BO Fimland, H Weman
Applied physics letters 94 (13), 133105, 2009
1342009
Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts
DL Dheeraj, G Patriarche, H Zhou, TB Hoang, AF Moses, S Grønsberg, ...
Nano letters 8 (12), 4459-4463, 2008
1222008
Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography
AM Munshi, DL Dheeraj, VT Fauske, DC Kim, J Huh, JF Reinertsen, ...
Nano letters 14 (2), 960-966, 2014
1092014
A story told by a single nanowire: optical properties of wurtzite GaAs
L Ahtapodov, J Todorovic, P Olk, T Mjåland, P Slåttnes, DL Dheeraj, ...
Nano letters 12 (12), 6090-6095, 2012
952012
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
G Signorello, E Lörtscher, PA Khomyakov, S Karg, DL Dheeraj, ...
Nature communications 5, 3655, 2014
872014
Serpentine superlattice: concept and first results
MS Miller, CE Pryor, H Weman, LA Samoska, H Kroemer, PM Petroff
Journal of Crystal Growth 111 (1-4), 323-327, 1991
691991
Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control
T Ba Hoang, AF Moses, L Ahtapodov, H Zhou, DL Dheeraj, ...
Nano letters 10 (8), 2927-2933, 2010
622010
Dimensionality effects on strain and quantum confinement in lattice-mismatched InAs x P 1− x/InP quantum wires
M Notomi, J Hammersberg, H Weman, S Nojima, H Sugiura, M Okamoto, ...
Physical Review B 52 (15), 11147, 1995
611995
Zinc blende GaAsSb nanowires grown by molecular beam epitaxy
DL Dheeraj, G Patriarche, L Largeau, HL Zhou, ATJ Van Helvoort, F Glas, ...
Nanotechnology 19 (27), 275605, 2008
562008
Advances in semiconductor nanowire growth on graphene
A Mazid Munshi, H Weman
physica status solidi (RRL)–Rapid Research Letters 7 (10), 713-726, 2013
512013
Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si (111)
AM Munshi, DL Dheeraj, J Todorovic, ATJ van Helvoort, H Weman, ...
Journal of Crystal Growth 372, 163-169, 2013
502013
Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy
HL Zhou, TB Hoang, DL Dheeraj, ATJ Van Helvoort, L Liu, JC Harmand, ...
Nanotechnology 20 (41), 415701, 2009
502009
Deep‐level transient spectroscopy and photoluminescence studies of electron‐irradiated Czochralski silicon
OO Awadelkarim, H Weman, BG Svensson, JL Lindström
Journal of applied physics 60 (6), 1974-1979, 1986
501986
Vertically oriented growth of GaN nanorods on Si using graphene as an atomically thin buffer layer
M Heilmann, AM Munshi, G Sarau, M Göbelt, C Tessarek, VT Fauske, ...
Nano letters 16 (6), 3524-3532, 2016
492016
Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy
DL Dheeraj, AM Munshi, M Scheffler, ATJ van Helvoort, H Weman, ...
Nanotechnology 24 (1), 015601, 2012
492012
Controlling inter-chain and intra-chain excitations of a poly (thiophene) derivative in thin films
M Berggren, P Bergman, J Fagerström, O Inganäs, M Andersson, ...
Chemical physics letters 304 (1-2), 84-90, 1999
481999
Optical detection of microwave-induced impact ionization of bound excitons in silicon
H Weman, M Godlewski, B Monemar
Physical Review B 38 (17), 12525, 1988
471988
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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